Static bending and vibration analysis of piezoelectric semiconductor beams considering surface effects

Zhang, Zhicheng; Liang, Chao; Wang, Yun; Xu, Rongqiao; Gao, Cun‐Fa; Zhang, Chunli

doi:10.1007/s42417-021-00328-4

Cited by 20 publications

(1 citation statement)

References 55 publications

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“…For example, Liang et al [28] developed a 1D static buckling model for PSs. Zhang et al [29] proposed a 1D multi-field coupling model incorporating surface effects for PS nanostructures based on surface elasticity theory. Zhang et al [30] investigated the dynamic buckling and free bending vibration of an axially compressed simply supported PS rod.…”

Section: Introductionmentioning

confidence: 99%

Virtual Work Principle for Piezoelectric Semiconductors and Its Application on Extension and Bending of ZnO Nanowires

Chen,

Zhang,

et al. 2023

Crystals

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This paper presents the principle of virtual work (PVW) for piezoelectric semiconductors (PSs), which extends the piezoelectric dielectrics to involve the semiconducting effect. As an application of the PVW, a one-dimensional (1D) approximation theory for the extension and bending of PS nanowires is established by directly applying the PVW and Bernoulli–Euler beam theory with the aid of the second-order approximation of electrostatic potential. To illustrate the new model, the mechanical displacement, electrostatic potential, and concentration of electrons for extension and bending deformation of n-type ZnO nanowires are analytically determined. Additionally, numerical results show that, for n-type Zinc Oxide nanowires, the distribution of electrostatic potential is anti-symmetric along the thickness direction for extension deformation. In contrast, the bending deformation causes a symmetric distribution of electrostatic potential characterized by the zeroth-order and the second-order electrostatic potential. Furthermore, these two different deformations result in the redistribution of electrons. The electrostatic potential can be tuned by adjusting the amplitude of the applied mechanical load. Moreover, we find that the increase in doping level will reduce the magnitude of electrostatic potential due to the screening effect. The presented PVW provides a general approach to establishing structural theories and an effective way of implementing numerical methods.

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Section: Introductionmentioning

confidence: 99%