Static and Dynamic Characterization of 1200 V SiC MOSFETs at Room and Cryogenic Temperatures

GaN-based cryogenic temperature power electronics for superconducting motors in cryo-electric aircraft

“…The error in power measurement that results from this phase error is given as [30], where ∆ϕ p is the phase discrepancy caused by the parasitic inductance of the measurement setup, and ϕ i is the phase difference between v 2 (t) and i 1 (t). Inspection of (13) shows that when the quality factor of the core under test is high, then ∆ϕ p will be amplified.…”

“…In such a powertrain the temperature of the power electronics would be cryogenic (<−150 • C). At these temperatures silicon-carbide (SiC) FETs [12][13][14] and IGBTs [15,16] tend to have an increase in conduction losses due to a higher R DS(ON) while silicon (Si) FETs [17,18] and gallium nitride (GaN) high electron mobility transistors (HEMTs), [19][20][21][22][23][24] have reduced conduction losses. However, carrier freezeout limits the R DS(ON) reductions of Si devices in comparison to GaN devices.…”