Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories

Friedrichs, Peter; Mitlehner, H.; Kaltschmidt, R.; Weinert, Ulrich; Bartsch, W.; Hecht, Christian; Dohnke, Karl Otto; Weis, B.; Stephani, D.

doi:10.4028/www.scientific.net/msf.338-342.1243

Cited by 59 publications

(25 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Through recent progress in growth and device processing technology of SiC, highvoltage 4H-SiC Schottky barrier diodes and vertical junction field-effect transistors have been developed [3,4]. To realize SiC power devices with a blocking voltage higher than several kilovolts for very high-voltage applications such as electric power transmission, bipolar devices possess great promise in terms of lower on-resistance owing to the effect of conductivity modulation [5,6].…”

mentioning

confidence: 99%

Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation

Kimoto

Danno

Suda

2008

Physica Status Solidi (b)

121

View full text Add to dashboard Cite

mentioning

confidence: 99%

Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation

Kimoto

Danno

Suda

2008

Physica Status Solidi (b)

121

View full text Add to dashboard Cite

“…It is worth discussing whether the lateral-vertical concept followed by SiCED and Infineon [20] (channel region lateral and current flow through the drift region vertical) or a purely vertical solution (current flow through the channel and the drift region in the vertical direction as well) like the one proposed, for example by Semisouth, Hitachi or Denso is the more suited strategy [21]. Often, the purely vertical structures offer better on-resistances.…”

Section: Sic Switching Devicesmentioning

confidence: 97%

“…We see drawbacks mostly in challenges assuring fabricationrelated process windows, the existence of high Miller capacitances, difficulties to integrate a body diode, and limits in avalanche and short-circuit performance. Therefore, at the moment, we at SiCED prefer the lateral vertical concept as presented earlier [20]. On the way towards a commercial product, additional topics such as a further reduction of the on-resistance by optimizing the cell layout as well as the reduction of the output capacitance are being addressed.…”

Section: Sic Switching Devicesmentioning

confidence: 98%

Silicon carbide power‐device products – Status and upcoming challenges with a special attention to traditional, nonmilitary industrial applications

Friedrichs¹

2008

Physica Status Solidi (b)

View full text Add to dashboard Cite

The paper is intended to give an overview of the status of SiC power devices with a focus on industrial applications. Developments intended for military applications, high frequency systems or integrated circuits will not be addressed. After being implemented in power supplies, SiC‐based devices were able to enter motor‐drive applications as well. This was made possible by considerable progress in the power rating of the devices. Performance and cost issues will be discussed in order to explain why the SiC market is developing more slowly than several market analyses have predicted so far. However, it will also be shown that SiC has gained a solid position in power electronics. For a deeper penetration of SiC‐based components into applications, the key issue is to justify the higher cost of SiC devices by working out system advantages such as a higher efficiency and cost‐saving potentials as well. A special discussion will be related to the issue of a suitable device structure for transistors. Related to this question, topics like MOSFET and JFET will be mentioned. Pros and cons of switches as well as the field of high‐voltage SiC devices will be highlighted and a short guide to decide whether the use of SiC components could be useful or not in certain applications will be given. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…Although a SiC bare die can withstand high temperatures because of its material characteristics, it cannot form part of a circuit by itself; it requires packaging that must be suitable for high temperatures. The SiC JFET supplied by SiCED is a research sample bare die, which is usually supplied as a cascode device with Si MOSFET [5,6]. It has a vertical channel structure, a 2.8 mm 2 surface area, and 2.5 A and 1200 V current and blocking voltage ratings.…”

Section: Sic Devices and Experimental Setupmentioning

confidence: 99%

Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters

Funaki

Balda

Junghans

et al. 2005

IEICE Electron. Express

View full text Add to dashboard Cite

This paper reports on SiC devices operating in a dc-dc buck converter under extremely high ambient temperatures. To this end, the authors packaged SiC JFET and Schottky diodes in thermally stable packages and built a high-temperature inductor. The converter was tested at ambient temperatures up to 400 • C. Although the conduction loss of the SiC JFET increases slightly with increasing temperatures, the SiC JFET and Schottky diode continue normal operation because their switching characteristics show minimal change with temperature. This work further demonstrates the suitability of the SiC devices for high-temperature power converter applications.

show abstract

Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories

Cited by 59 publications

References 0 publications

Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation

Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation

Silicon carbide power‐device products – Status and upcoming challenges with a special attention to traditional, nonmilitary industrial applications

Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters

Contact Info

Product

Resources

About