Static and dynamic behavior of the SiC complementary JBS structures

Kurel, R.; Rang, Toomas

doi:10.1109/bec.2006.311060

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…Our earlier investigations (e.g. [2,3]) on current crowding effect at Schottky interfaces due to barrier height differences created an idea to investigate numerically the complementary JBS diodes under different temperatures, epitaxial layer concentrations and barrier heights (work function) conditions. The reason for such investigations results directly from the structure (cross section) of JBS diode, which has three different regions for the current flow through the device under upper metal contact.…”

Section: Introductionmentioning

confidence: 99%

Numerical Study of Current Crowding Phenomenon in Complementary 4H-SiC JBS Rectifiers

Rang

Higelin²,

Kurel³

2004

MSF

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A new type of power semiconductor device -the Junction Barrier Schottky (JBS) diodehas been introduced recently [1]. Our earlier investigations (e.g. [2,3]) on current crowding effect at Schottky interfaces due to barrier height differences created an idea to investigate the temperature influence on current crowding phenomenon in complementary JBS diodes. The reason for such investigations results from the structure (cross section) of JBS diode, which has three different regions for the current flow through the device under upper metal contact. The MEDICI software package for numerical simulations has been used [4].The current distribution along the p-and n-4H-SiC structures under different temperatures, epitaxial layer concentrations and barrier heights (work function) conditions have been investigated and the results are presented. The clear differences in current suppressing behavior around the areas, where the arbitrary pn-junction reaches the upper contact of the structures near the edge of Schottky interface can be seen only in some cases. Our simulations show also the weak sides of the pepilayer SiC JBS, where the temperature influence changes the normal behavior of the device and rearranges the current distribution under higher temperature and barrier height values.

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Section: Introductionmentioning

confidence: 99%

Numerical Study of Current Crowding Phenomenon in Complementary 4H-SiC JBS Rectifiers

Rang

Higelin²,

Kurel³

2004

MSF

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“…The detailed description of the model used here is presented in [12], the appropriate model parameters are presented in our latest paper on this topic [13], and therefore these questions will be not discussed here in more detail.…”

Section: Description Of the Modelmentioning

confidence: 99%

Parametric simulation of SiC Schottky JBS structures

Rang¹,

Kurel²

2007

WIT Transactions on Engineering Sciences, Vol 55

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The parametric simulation has been carried out for optimizing the influence of the Schottky contact metal work function (contact surface interface) influence on the distribution of the built-in electrical field and consequently on static and dynamic characteristics of the JBS device. On the basis of simulations and discussions the low-power losses solution for the JBS device has been developed. The results suggest keeping the electric field strength under contact surface as low as possible in order to reduce or even avoid the relatively expensive and complex passivation solutions by the manufacturing of the JBS devices.The numerical simulator DYNAMIT 2DT-SCHOTTKY developed at the Department of Electronics TUT was used in our research.

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Static and dynamic behavior of the SiC complementary JBS structures

Cited by 2 publications

References 6 publications

Numerical Study of Current Crowding Phenomenon in Complementary 4H-SiC JBS Rectifiers

Numerical Study of Current Crowding Phenomenon in Complementary 4H-SiC JBS Rectifiers

Parametric simulation of SiC Schottky JBS structures

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