States in the Gap in Glassy Semiconductors

Street, R. A.; Mott, N. F.

doi:10.1103/physrevlett.35.1293

Cited by 997 publications

(246 citation statements)

References 12 publications

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“…It is during the analysis of charged defects in the parent structure that we will be able to make a connection between the present approach and the much earlier specific proposals on the defect states in chalcogenides. 40,41 The large spatial extent of the malcoordination-based states is a result of the lattice's attempt to mitigate the energy cost of what would have been a local defect in the parent structure. The converse is also true: According to Eq.…”

Section: The Charge On the Coordination Defects And The Relation Tmentioning

confidence: 99%

Electronic structure and the glass transition in pnictide and chalcogenide semiconductor alloys. II. The intrinsic electronic midgap states

Zhugayevych

Lubchenko

2010

The Journal of Chemical Physics

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We propose a structural model that treats in a unified fashion both the atomic motions and electronic excitations in quenched melts of pnictide and chalcogenide semiconductors. In Part I (submitted to J. Chem. Phys.), we argued these quenched melts represent aperiodic ppσ-networks that are highly stable and, at the same time, structurally degenerate. These networks are characterized by a continuous range of coordination. Here we present a systematic way to classify these types of coordination in terms of discrete coordination defects in a parent structure defined on a simple cubic lattice. We identify the lowest energy coordination defects with the intrinsic midgap electronic states in semiconductor glasses, which were argued earlier to cause many of the unique optoelectronic anomalies in these materials. In addition, these coordination defects are mobile and correspond to the transition state configurations during the activated transport above the glass transition. The presence of the coordination defects may account for the puzzling discrepancy between the kinetic and thermodynamic fragility in chalcogenides. Finally, the proposed model recovers as limiting cases several popular types of bonding patterns proposed earlier, including: valence-alternation pairs, hypervalent configurations, and homopolar bonds in heteropolar compounds.

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Section: The Charge On the Coordination Defects And The Relation Tmentioning

confidence: 99%

Electronic structure and the glass transition in pnictide and chalcogenide semiconductor alloys. II. The intrinsic electronic midgap states

Zhugayevych

Lubchenko

2010

The Journal of Chemical Physics

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“…In common with the other solids that contain small onsite localized small bipolarons (Anderson, 1975;Watkins, 1984;Street et al, 1975;Kastner et al, 1976;Baraff et al, 1980;Bagraev & Mashkov, 1984;Bagraev & Mashkov, 1988), the δ -barriers containing the dipole boron centres have been found to be in an excitonic insulator regime at the sheet density of holes in the Si-QW lower than 10 15 m -2 . The conductance of these silicon nanostructures appeared to be determined by the parameters of the 2D gas of holes in the Si-QW (Bagraev et al 2002;2004b;2006b).…”

Section: Superconductor Properties For δ -Barriers Heavily Doped Withmentioning

confidence: 78%

Superconductor Properties for Silicon Nanostructures

Klyachkin¹,

Malyarenko²,

Bagraev³

et al. 2010

Superconductor

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“…This leads to the formation of other defect states accompanied with the local lattice distortion and atomic relaxation, and then the resulting decline of the lattice energy due to a negative effective correlation energy. 24,25 Therefore the main defects in S and As, are given by exothermic reaction, as follow:…”

Section: Discussionmentioning

confidence: 99%

Photoconductivity of amorphous As2S8 chalcogenide film under bandgap light irradiation

Zou

Shen

et al. 2013

AIP Advances

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The photoconductivity of amorphous As 2 S 8 chalcogenide film under the irradiation of bandgap light is investigated. In the temperature range 300-350 K, the dark conductivity and photoconductivity of the annealed As 2 S 8 film increase with the temperature, and the dependence of the both on temperature shows that the conduction in As 2 S 8 film is an activated process having single activation energy. Under the irradiation of bandgap light, the photocurrents of the annealed and illuminated As 2 S 8 film increase with the irradiation intensity, and their difference indicates the existence of the light-soaked effect. Meanwhile, the photoconductivity degradation during the irradiation and the photocurrent decay after stopping the irradiation are observed. By adding the irradiation of the sub-bandgap light, the enhancement of photoinduced voltage occurs. C 2013 Author(s)

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States in the Gap in Glassy Semiconductors

Cited by 997 publications

References 12 publications

Electronic structure and the glass transition in pnictide and chalcogenide semiconductor alloys. II. The intrinsic electronic midgap states

Electronic structure and the glass transition in pnictide and chalcogenide semiconductor alloys. II. The intrinsic electronic midgap states

Superconductor Properties for Silicon Nanostructures

Photoconductivity of amorphous As2S8 chalcogenide film under bandgap light irradiation

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