State of the art, trends, and opportunities for oxide epitaxy

Abstract

Oxides have attracted enormous attention for both application-driven and fundamental solid-state research owing to their broad range of unusual and unique properties. Oxides play an important role in countless applications, e.g., as catalysts or functional materials in electronic devices. The ability to produce high-quality epitaxial films is often crucial for these purposes. Various approaches to oxide epitaxy have been evolving for many years, each of which has its own features and strengths. However, oxide epitaxy also poses numerous challenges, the main ones being (1) the difficulty of finding a universal, versatile, and clean way to transfer an element from a source onto a substrate and (2) the ability to control the phase formation in a growing film. For oxides, this is an especially relevant topic due to the high oxidization potentials needed to achieve many desired compounds, the high temperatures required for numerous oxide phases to form, and the high temperatures necessary to grow films in adsorption-controlled growth modes. We provide a non-exhaustive overview of the state-of-the-art of oxide epitaxy within the context of these challenges. We also examine exciting advances and recent trends to overcome those challenges. Concluding, we discuss the implications of ongoing developments and the future of oxide epitaxy. An emphasis is put on thermal laser epitaxy and CO2 laser heaters, which we deem especially promising.

Is Ba3In2O6 a high-Tc superconductor?

“…At this point novel superconducting materials (and other materials of interest) are being suggested at a speed greatly exceeding the ability of experimentalists to synthesize and thoroughly probe these materials. It will be exciting to see if novel trends in the epitaxial deposition of materials will help close this speed gap between theoretical prediction and experimental validation (or refutation) to some extent [16].…”

“…The synthesis of epitaxial thin films of Ba 3 In 2 O 6 has obvious advantages for testing the electrical transport properties of Ba 3 In 2 O 6 but faces additional challenges. To start with, the large a-axis lattice constant (0.419 nm) of Ba 3 In 2 O 6 suggests a limited choice of substrates and its high formation temperature pushes the limits of conventional heaters [13][14][15][16]. Recently, we developed a means to grow single-phase films of Ba 3 In 2 O 6 utilizing suboxide molecular-beam epitaxy (s-MBE) [14,17].…”