State-of-the-art passivation strategies of c-Si for photovoltaic applications: A review

Muduli, Sakti Prasanna; Kale, Paresh

doi:10.1016/j.mssp.2022.107202

Cited by 25 publications

(9 citation statements)

References 187 publications

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“…Energy storage, catalysis, sensors, electronics 83,84 Flexible electronics, sensors, transparent conductive lms 85 Integrated circuits, solar cells, microelectronic 86…”

Section: Applicationsmentioning

confidence: 99%

Future prospects of MXenes: synthesis, functionalization, properties, and application in field effect transistors

Rahman,

Al Mamun

2024

Nanoscale Adv.

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“…Energy storage, catalysis, sensors, electronics 83,84 Flexible electronics, sensors, transparent conductive lms 85 Integrated circuits, solar cells, microelectronic 86…”

Section: Applicationsmentioning

confidence: 99%

Future prospects of MXenes: synthesis, functionalization, properties, and application in field effect transistors

Rahman,

Al Mamun

2024

Nanoscale Adv.

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“…An ideal SE allows for effective collection of photogenerated carriers while minimizing recombination losses. [25][26][27] This indicates that in the lightly doped region of the SE, it is important to maintain a low surface concentration in order to minimize surface defect state density and Auger recombination probability. Additionally, a shallow junction depth is desirable to minimize optical absorption of incident light.…”

Section: Pre-diffusion Optimizationmentioning

confidence: 99%

Study on selective emitter fabrication through an innovative pre‐diffusion process for enhanced efficiency in TOPCon solar cells

Chen,

Liu,

et al. 2023

Progress in Photovoltaics

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TOPCon (tunnel oxide passivated contact) solar cell is the mainstream high‐efficiency crystalline silicon solar cell structure. However, the lack of efficient passivation contact mechanisms on the front surface restricts the electrical performance ability to improve further. Selective emitter (SE) technology, considered a potential solution, needs to be more mature. This work provides a unique thermal pre‐diffusion approach combined with laser treatment and post‐oxidation annealing to create SE structures in TOPCon solar cells. Times for the high‐temperature process are equivalent to those for a traditional homogenous emitter. The innovative thermal pre‐diffusion process created a unique boron doping profile, achieving a high surface concentration of nearly 1 × 1020 cm−3 with a shallow junction depth of approximately 0.25 μm. Laser treatment further activated boron and facilitated its diffusion, influenced by the boron silicate glass layer and surface boron atoms. Adjustments were made to improve the pre‐diffusion recipe, including an additional boron deposition step, increasing non‐activated boron atoms. Introducing larger pyramidal microstructures also improved the junction depth and surface concentration in the heavily doped region. Compared to homogeneous emitters, the SE structures exhibited lower surface concentration in the lightly doped region, reducing the recombination current density in the passivation region J0,pass values. The SE structures achieved higher junction depths, limiting metal atom diffusion and reducing the current recombination density in the metal contact region J0,metal values. The contact resistivity between metal and silicon was also decreased. Overall, introducing SE structures resulted in a batch‐average efficiency improvement of 0.26%, reaching an average efficiency of 25.22% for TOPCon solar cells, and has industrial mass‐producible.

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“…High-quality surface passivation can be achieved by suppressing the unsaturated or dangling bonds present on the silicon surface by using chemical species such as hydrogen or by depositing a dielectric layer (chemical passivation). Another way to achieve high-quality surface passivation is by creating an electric field at the silicon surface to repel the minority charge carriers (field-effect passivation) [2,3]. Various types of dielectric materials have been studied for suppressing defect-assisted Shockley-Read Hall (SRH) recombination [4], and some are implemented in the manufacturing of silicon solar cells, such as Al-doped ZnO [5], TiO 2 [6], ZrO 2 [7] , SiO x [8],…”

Section: Introductionmentioning

confidence: 99%

Effect of films thickness and hydrogen annealing on passivation performance of plasma ALD based Hafnium oxide films

Devi,

Tomer,

Pathi

et al. 2024

Phys. Scr.

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We investigate the silicon surface passivation property of Plasma Atomic Layer Deposited (PALD) hafnium oxide (HfOx) thin films and study its dependence on silicon (Si) doping type, film thickness, and post-deposition annealing conditions. Our results demonstrate that as-deposited HfOx films exhibit poor passivation quality that can be improved by performing post-deposition annealing at 450℃ in hydrogen ambient. We demonstrate that the films can effectively passivate p-Si surfaces as compared to n-Si, where the surface passivation quality of the films improves with increasing film thickness for both silicon doping type. The best performance with minority carrier lifetime of 1.7 ms, corresponding surface recombination velocity (SRV) ~10 cm/s, is achieved for HfOx films thickness ~23 nm deposited on the p-Si substrate. The Capacitance-Voltage (C-V) measurements give an insight into the passivation mechanism of the studied films. Field effect passivation is found to be an important passivation mechanism in plasma ALD deposited HfOx films, as revealed by C-V measurements. The films are also characterized using Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS), which reveals the chemical passivation provided by hydrogen ambient annealing. Overall, the impact of hafnium oxide film thickness and hydrogen ambient annealing conditions on silicon surface passivation is investigated. Our findings will help in utilizing plasma ALD process based hafnium oxide films for silicon solar cell device application.

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State-of-the-art passivation strategies of c-Si for photovoltaic applications: A review

Cited by 25 publications

References 187 publications

Future prospects of MXenes: synthesis, functionalization, properties, and application in field effect transistors

Future prospects of MXenes: synthesis, functionalization, properties, and application in field effect transistors

Study on selective emitter fabrication through an innovative pre‐diffusion process for enhanced efficiency in TOPCon solar cells

Effect of films thickness and hydrogen annealing on passivation performance of plasma ALD based Hafnium oxide films

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