State of the art of (Cd,Zn)Te as gamma detector

Fiederle, M.; Feltgen, T.; Meinhardt, J.; Rogalla, M.; Benz, K.W.

doi:10.1016/s0022-0248(98)00761-1

Cited by 89 publications

(41 citation statements)

References 18 publications

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“…Trap T 1 with an activation energy of 0.1 eV and a capture cross section of 3 ϫ 10 −21 cm 2 may correspond to the shallow levels ͑or band͒ of the so called A centers 8,25,29,30 usually reported in the range of 0.12-0.15 eV, in particular, 23 A 0 ͑0.12 eV, 2 ϫ 10 −16 cm 2 ͒, A ͑0.14 eV, 1.0ϫ 10 16 cm 2 ͒, and A 1 ͑0.15 eV, 4 ϫ 10 −17 cm 2 ͒. The microscopic origin of this level has been attributed to ͑V Cd -In Cd ͒, ͑V Cd -Cl Te ͒, or ͑V Cd -In Te ͒ complexes.…”

Section: Resultsmentioning

confidence: 99%

Identification of deep trap levels from thermally stimulated current spectra of semi-insulating CdZnTe detector material

Pavlović¹,

Jakšić²,

Zorc³

et al. 2008

Journal of Applied Physics

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Deep trap levels in the semi-insulating ͑SI͒ CdZnTe detector material were characterized by simultaneous multiple peak analysis based on thermally stimulated current ͑TSC͒ measurements. In our TSCs that have been published previously electron hole pairs were created through the use of proton beam irradiation. Charge carriers were captured in deep traps and afterward released by thermal emission, which was recorded in the 90-300 K range. We showed that the obtained TSC spectra could be well fitted with a unique set of 14 different deep traps, which were all simultaneously and completely characterized. The obtained trap data are in good accordance with earlier deep trap characterizations of the other authors obtained on similar SI CdZnTe materials using different methods.

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Section: Resultsmentioning

confidence: 99%

Identification of deep trap levels from thermally stimulated current spectra of semi-insulating CdZnTe detector material

Pavlović¹,

Jakšić²,

Zorc³

et al. 2008

Journal of Applied Physics

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“…The same PL spectrum can be registered in low resistivity CdTe. Undoped (Cd,Zn)Te grown by High Pressure Bridgman Method (Cd,Zn)Te crystal with the highest resistivity and excellent detector performance are grown by the High Pressure Bridgman Method HPB [17,22]. The material is intentionally undoped.…”

Section: High Resistivity Cdte and (Cdzn)te From Various Sourcesmentioning

confidence: 99%

Growth of high resistivity CdTe and (Cd,Zn)Te crystals

Fiederle¹,

Babentsov

Franc

et al. 2003

Cryst. Res. Technol.

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The growth of high resistivity CdTe and (Cd,Zn)Te is successfully performed with different kinds of doping. In the literature intentionally undoped as well as doped crystals are presented with resistivities up to 10 10 Ωcm. In this paper we review the growth of high resistivity CdTe and (Cd,Zn)Te. The mechanism of compensation is discussed regarding the different dopants and deep levels, which seem to be responsible for the high resistivity. A common compensation model explains the high resistivity by deep levels. The doping and the influence on the compensation mechanism is compared for several elements like tin, germanium and chlorine. The material properties and the crystal quality of undoped and doped CdTe as well as (Cd,Zn)Te are shown. Dedicated to Professor K. W. Benz on the occasion of his 65th birthday.

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“…At present Cd 1 À x Zn x Te solid solutions with tunable band gap in the spectral region between 1.50 eV to 2.30 eV at room temperature (for x ¼0 and x ¼1.0, respectively) are being intensively studied mainly because they are considered as suitable material for non-cooled X-and gamma rays detectors [1][2][3][4]. The presence of zinc atoms substantially increases the resistivity of these solid solutions and hence their detector performance in comparison with the CdTe crystals [5].…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Kosyak

Znamenshchykov

Čerškus

et al. 2016

Journal of Luminescence

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a b s t r a c tPolycrystalline Cd 1 À x Zn x Te thick films with thicknesses of about 30 μm have been deposited on a Mo coated glass substrate by means of close-spaced vacuum sublimation technique. X-ray diffraction measurements have shown that the films obtained have only cubic zinc blende phase. The influence of Zn concentration on the photoluminescence (PL) spectra of Cd 1 À x Zn x Te films was investigated. This let us determine the nature and energy structure of the intrinsic defects and residual impurities in the films. The presence of the most intense acceptor bound exciton A°X-line for x ¼ 0.10 and the lines of localized excitons (x ¼ 0.32 À 0.44) in PL spectra of Cd 1 À x Zn x Te films indicates their fairly good optical quality as well as the p-type conductivity. There were also other intensive broad PL bands, caused by the recombination of donor-acceptor pairs involving complex acceptor centers, extended defects of dislocation type, and microstress in the films. It was also established a correlation between the broadening of exciton lines and the values of microstress in Cd 1 À x Zn x Te thick films. Taking into account the energy position of exciton lines, the concentration dependence of the band gap for the Cd 1 À x Zn x Te thick films is presented.

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State of the art of (Cd,Zn)Te as gamma detector

Cited by 89 publications

References 18 publications

Identification of deep trap levels from thermally stimulated current spectra of semi-insulating CdZnTe detector material

Identification of deep trap levels from thermally stimulated current spectra of semi-insulating CdZnTe detector material

Growth of high resistivity CdTe and (Cd,Zn)Te crystals

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

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