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Raymond, S.; Fafard, S.; Poole, Philip J.; Wójs, Arkadiusz; Hawrylak, Paweł; Charbonneau, S.; Leonard, D.; León, R.; Petroff, P. M.; Merz, Joachim

doi:10.1103/physrevb.54.11548

Cited by 227 publications

(110 citation statements)

References 32 publications

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“…At low temperatures, conventional InAs self-assembled QDs exhibit ground state energies around 1.1-1.18 eV for capped QDs with heights in the range of 5 -8 nm. 15,16 On the other hand, introducing an annealing step during the growth or afterwards, their height decreases to 2 -3 nm shifting up the ground state energy well above 1.3 eV. 17 Therefore, we conclude that the height values found for type-A and type-B QDs are compatible with the fundamental transitions observed in their PL spectra.…”

supporting

confidence: 68%

“…The approximately constant excited state splitting found indicates that the QD lateral confinement could be described by a smooth parabolic potential. 18 The average value of ⌬E ϳ 38 meV is smaller by 30%-50% than those reported in the literature for QDs emitting below 1.2 eV, 15,16 and it suggests, within this model, that type-A QDs exhibit a larger diameter than standing InAs/ GaAs self-assembled QDs with similar ground state energy. Finally, for the type-B QD ensemble, we have found only one excited state ͑B 1 ͒ splitted by 34.9 meV from its fundamental state in good correspondence with values reported in the literature for QDs emitting above 1.3 eV.…”

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confidence: 47%

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Formation and optical characterization of single InAs quantum dots grown on GaAs nanoholes

Alonso‐González¹,

Alén²,

Fuster³

et al. 2007

Applied Physics Letters

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We present a study of the structural and optical properties of InAs quantum dots formed in a low density template of nanoholes fabricated by droplet epitaxy on GaAs ͑001͒. The growth conditions used here promote the formation of isolated quantum dots only inside the templated nanoholes. Due to the good optical quality and low density of these nanostructures, their ensemble and individual emission properties could be investigated and related to the particular growth method employed and the quantum dot morphology. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2799736͔ New nanoelectronics and quantum information perspectives require the ability of growing nanostructures with control in size and spatial location. In particular, for the application of quantum devices based in single quantum dots 1,2 ͑QDs͒ as, for instance, single photon emitters, it is necessary to combine strategies that would permit precise location of a single nanostructure presenting at the same time high optical quality. [3][4][5][6] With this aim, a quite wide-spread strategy to overcome the randomly positioning of self-assembled nanostructures is based on the use of patterned substrates to create preferential nucleation sites that define the position and size of the nanostructures. In particular, highly ordered arrays of QDs have been already obtained using different lithographic approaches followed by an appropriate regrowth process. 5,7,8 In this situation, the droplet epitaxy has revealed itself as a potential technique to achieve templates for localization of nanostructures with high optical quality in latticemismatched heteroepitaxial systems. 9 This technique has been mainly developed in GaAs based systems and basically consists of the supply of a certain amount of Ga during growth to form metallic droplets on the surface, which are later transformed into crystalline GaAs under arsenic atmosphere. Under certain experimental conditions, the crystallization process leads to the formation of specific structures containing nanoholes that act as preferential sites for InAs QD nucleation upon further InAs deposition. 10 The density of nanoholes corresponds to that of the droplets, being possible to obtain QD densities as low as 10 7 cm −2 . 11 The size of these nanostructures is related to the amount of InAs filling the nanoholes, with independence of their density, as opposed to the QD formation by self-assembling processes. This fact is especially interesting for applications based on a single QD. Furthermore, in coincidence with other lithographic techniques, 12 a different number of QD per nanohole can also be obtained. 13 In this situation, one advantage of the droplet epitaxy technique is that it can provide nanotemplates for QD formation without the need of growing thick buffer layers to avoid the influence of residual contamination from the fabrication process on the optical properties of the nanostructures.This work deals with the structural and optical characterization of InAs QDs formed in a template of 2.4 ϫ 10 8 cm −2 nano...

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confidence: 68%

mentioning

confidence: 47%

Formation and optical characterization of single InAs quantum dots grown on GaAs nanoholes

Alonso‐González¹,

Alén²,

Fuster³

et al. 2007

Applied Physics Letters

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“…This indicates that electrons are confined in a parabolic-like potential within the lens-shaped QDs. 31,32 It can be noted in Fig. 7 that the experimentally observed temperature dependence of the optical transition energies (symbols) fit fairly well with the semi-empirical Varshni expression 33 …”

Section: Temperature-dependent Photoreflectance Spectrasupporting

confidence: 50%

Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors

Nedzinskas

Čechavičius

Rimkus

et al. 2015

Journal of Applied Physics

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We present a photoreflectance (PR) study of multi-layer InAs quantum dot (QD) photodetector structures, incorporating InGaAs overgrown layers and positioned asymmetrically within GaAs/AlAs quantum wells (QWs). The influence of the back-surface reflections on the QD PR spectra is explained and a temperature-dependent photomodulation mechanism is discussed. The optical interband transitions originating from the QD/QW ground-and excited-states are revealed and their temperature behaviour in the range of 3-300 K is established. In particular, we estimated the activation energy ($320 meV) of exciton thermal escape from QD to QW bound-states at high temperatures. Furthermore, from the obtained Varshni parameters, a strain-driven partial decomposition of the InGaAs cap layer is determined. V C 2015 AIP Publishing LLC.

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“…1 and 2 of our letter 2 described by peak separations of 53, 49, 49, 40, and 57 or an average of 49.6 meV. These peaks are more accurately described by an energy level spacing that is more nearly constant and of the same order-of-magnitude as observed and predicted by others [7][8][9][10] for the intersubband levels of the quantum dot than the theoretical curve proposed by Poole et al…”

mentioning

confidence: 45%

Response to “Comment on ‘Thermal annealing effect on the intersublevel transitions in InAs quantum dots’ ” [Appl. Phys. Lett. 80, 4867 (2002)]

Berhane

Manasreh

Yang

et al. 2002

Applied Physics Letters

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State filling and time-resolved photoluminescence of excited states inInxGa1

Cited by 227 publications

References 32 publications

Formation and optical characterization of single InAs quantum dots grown on GaAs nanoholes

Formation and optical characterization of single InAs quantum dots grown on GaAs nanoholes

Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors

Response to “Comment on ‘Thermal annealing effect on the intersublevel transitions in InAs quantum dots’ ” [Appl. Phys. Lett. 80, 4867 (2002)]

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