Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing

Hanyu, Takahiro; Endoh, Tetsuo; Suzuki, Daisuke; Koike, Hideaki; Ma, Yi; Onizawa, Naoya; Natsui, Masanori; Ikeda, Shoji; Ohno, Hideo

doi:10.1109/jproc.2016.2574939

Cited by 111 publications

(58 citation statements)

References 87 publications

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“…The computer architecture, where nonvolatile elements are located on a chip with CMOS devices, is traditionally called logic-in-memory, although as of yet no information is processed in nonvolatile elements. Power-efficient MRAMbased logic-in-memory concepts have already been demonstrated [71]. They include field-programmable gate arrays and ternary content addressable memory, as well as other variants.…”

Section: Nonvolatile Computingmentioning

confidence: 99%

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Demands for spin-based nonvolatility in emerging digital logic and memory devices for low power computing

Sverdlov

Selberherr²

2018

FACTA U EE

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Miniaturization of semiconductor devices is the main driving force to achieve an outstanding performance of modern integrated circuits. As the industry is focusing on the development of the 3nm technology node, it is apparent that transistor scaling shows signs of saturation. At the same time, the critically high power consumption becomes incompatible with the global demands of sustaining and accelerating the vital industrial growth, prompting an introduction of new solutions for energy efficient computations. Probably the only radically new option to reduce power consumption in novel integrated circuits is to introduce nonvolatility. The data retention without power sources eliminates the leakages and refresh cycles. As the necessity to waste time on initializing the data in temporarily unused parts of the circuit is not needed, nonvolatility also supports an instanton computing paradigm. The electron spin adds additional functionality to digital switches based on field effect transistors. SpinFETs and SpinMOSFETs are promising devices, with the nonvolatility introduced through relative magnetization orientation between the ferromagnetic source and drain. A successful demonstration of such devices requires resolving several fundamental problems including spin injection from metal ferromagnets to a semiconductor, spin propagation and relaxation, as well as spin manipulation by the gate voltage. However, increasing the spin injection efficiency to boost the magnetoresistance ratio as well as an efficient spin control represent the challenges to be resolved before these devices appear on the market. Magnetic tunnel junctions with large magnetoresistance ratio are perfectly suited as key elements of nonvolatile CMOS-compatible magnetoresistive embedded memory. Purely electrically manipulated spin-transfer torque and spin-orbit torque magnetoresistive memories are superior compared to flash and will potentially compete with DRAM and SRAM. All major foundries announced a near-future production of such memories. Two-terminal magnetic tunnel junctions possess a simple structure, long retention time, high endurance, fast operation speed, and they yield a high integration density. Combining

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Section: Nonvolatile Computingmentioning

confidence: 99%

“…These CMOS/spintronic hybrid solutions are already competitive in comparison to the conventional CMOS technology with respect to power consumption and speed. The introduction of nonvolatility in circuits helps cutting the power consumption by 50%, with outstanding 90% reduction in specific circuits [71].…”

Section: Nonvolatile Computingmentioning

confidence: 99%

Demands for spin-based nonvolatility in emerging digital logic and memory devices for low power computing

Sverdlov

Selberherr²

2018

FACTA U EE

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“…MTJ with a high TMR can guarantee easy access to peripheral CMOS blocks, e.g., sensing and control circuits [28][29][30][31][32]. The real value of TMR (TMR(V)) can be adjusted by changing zero bias (TMR(0)) and V h (half of TMR (0)):…”

Section: Stt-mtjmentioning

confidence: 99%

High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects

Cai

Wang²,

Wang

et al. 2017

Applied Sciences

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Featured Application: Non-volatile magnetic tunnel junction-based magnetoresistive random access memory as reliable, high energy efficiency Internet of Things (IoTs) node memory.Abstract: The Internet of Things (IoTs) relies on efficient node memories to process data among sensors, cloud and RF front-end. Both mainstream and emerging memories have been developed to achieve this energy efficiency target. Spin transfer torque magnetic tunnel junction (STT-MTJ)-based nonvolatile memory (NVM) has demonstrated great performance in terms of zero standby power, switching power efficiency, infinite endurance and high density. However, it still has a big performance gap; e.g., high dynamic write energy, large latency, yield and reliability. Recently, voltage-controlled magnetic anisotropy (VCMA) has been introduced to achieve improved energy-delay efficiency and robust non-volatile writing control with an electric field or a switching voltage. VCMA-MTJ-based MRAM could be a promising candidate in IoT node memory for high-performance, ultra-low power consumption targets.

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“…High-density STT-MRAM arrays with 4Gbit capacities have been already demonstrated [3]. The availability of high-capacity non-volatile memory positioned close to highperformance CMOS circuits opens a new horizon in exploring conceptually new logic-in-memory [4] and computing-in-memory architectures for future artificial intelligence and cognitive computing.…”

mentioning

confidence: 99%

“…In addition, rapidly increasing critical currents for switching STT-MRAM at 5ns and faster reduce the endurance to that of the flash memory. The development of an electrically addressable non-volatile memory combining high speed (sub-ns operation) and high endurance is essential for replacing SRAM) in high-level caches of hierarchical multi-level processor memory structures with a non-volatile memory [4]. The spin-orbit torque MRAM (SOT-MRAM) with perpendicular magnetization combines non-volatility, high speed, and high endurance, which makes it suitable for applications in caches [5].…”

mentioning

confidence: 99%

Ultra-Fast Switching of a Free Magnetic Layer with Out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells

2018

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Continuous miniaturization of complementary metal-oxide semiconductor (CMOS) devices is one of the driving forces for the unprecedented increase of speed and performance delivered by modern integrated circuits However, a rapid increase of the stand-by power due to transistor leakages and the need to refresh the data in dynamic random access memory (DRAM) is becoming a pressing issue. The microelectronics industry is facing major challenges related to power dissipation and energy consumption, and the microprocessors' scaling will hit a power wall soon. An attractive path to mitigate the unfavorable trend of increasing power at stand-by is to introduce non-volatility in the circuits. The development of an electrically addressable non-volatile memory which combines fast operation, simple structure, and high endurance is essential to mitigate the increase of the stand-by power and to introduce instant-on architectures without the need of data initialization when going from a stand-by to an operation regime. Oxide-based resistive RAM (RRAM) possesses filamentary switching between on/off states and is thus intrinsically prone to significant resistance fluctuations in both on and off states. In addition, the endurance reported is only slightly higher than that in flash memory. For this reason, it is premature to consider RRAM at its current stage of development for digital applications. Since continuous conductance modulation is suitable for implementing analog synaptic weights, both filamentary and nonfilamentary switching RRAM types are currently intensively investigated, particularly also for neuromorphic applications [1].

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Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing

Cited by 111 publications

References 87 publications

Demands for spin-based nonvolatility in emerging digital logic and memory devices for low power computing

Demands for spin-based nonvolatility in emerging digital logic and memory devices for low power computing

High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects

Ultra-Fast Switching of a Free Magnetic Layer with Out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells

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