Standard-Cell-Based Comparators for Ultra-Low Voltage Applications: Analysis and Comparisons
Riccardo Della Sala,
Francesco Centurelli,
Giuseppe Scotti
et al.
Abstract:This work is focused on the performance of three different standard-cell-based comparator topologies, considering ultra-low-voltage (ULV) operation. The main application scenarios in which standard-cell-based comparators can be exploited are considered, and a set of figures of merit (FoM) to allow an in-depth comparison among the different topologies is introduced. Then, a set of simulation testbenches are defined in order to simulate and compare the considered topologies implemented in both a 130 nm technolog… Show more
In this paper a novel ultra-low voltage (ULV) standard-cell-based comparator which provides rail-to-rail input common-mode range (ICMR) is presented. The topology, unlike the others in the literature, uses only 2-inputs NAND gates and is able to operate with supply voltages as low as 0.15V. A detailed theoretical analysis based on transistor level modeling is provided to explain the operating principle and highlight the performance advantages of the proposed comparator. The circuit has been tested through several simulations, including corner analysis and Monte Carlo runs, by using three different technologies: 180 nm, 130 nm and 28 nm for both a supply voltage of 0.3 V and 0.15 V. The results found not only confirm the robustness of the proposed comparator, but also demonstrate very advantageous performances. Indeed, for the same technology node it exhibits the highest speed and the lowest EDP (about ten times lower than the one of the others standard-cell-based comparators in the literature). It exhibits also the lowest power consumption and silicon area.
In this paper a novel ultra-low voltage (ULV) standard-cell-based comparator which provides rail-to-rail input common-mode range (ICMR) is presented. The topology, unlike the others in the literature, uses only 2-inputs NAND gates and is able to operate with supply voltages as low as 0.15V. A detailed theoretical analysis based on transistor level modeling is provided to explain the operating principle and highlight the performance advantages of the proposed comparator. The circuit has been tested through several simulations, including corner analysis and Monte Carlo runs, by using three different technologies: 180 nm, 130 nm and 28 nm for both a supply voltage of 0.3 V and 0.15 V. The results found not only confirm the robustness of the proposed comparator, but also demonstrate very advantageous performances. Indeed, for the same technology node it exhibits the highest speed and the lowest EDP (about ten times lower than the one of the others standard-cell-based comparators in the literature). It exhibits also the lowest power consumption and silicon area.
Forward body biasing (FBB) has often been exploited in the literature for improving the performance of both analog and digital building blocks. Recent works have explored the application of FBB variants to mixed-signal electronics and in particular to dynamic comparators, where these techniques can help to relax the trade-off between speed and power consumption at medium and low supply voltages. However, the literature lacks a structured analysis of the solutions that have been developed and of the trade-offs that affect them. This work attempts to fill the gap by providing a survey of the application of FBB techniques to dynamic comparators. The analysis focuses on the two most popular dynamic comparator topologies, the Strong Arm latch and Elzakker’s comparator. Several FBB variants are examined from a theoretical point of view. Moreover, the benefits and the limitations of the different approaches are assessed in terms of the main figures of merit through a systematic campaign of simulations in a 55 nm CMOS technology.
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