Stamp Transferred Suspended Graphene Mechanical Resonators for Radio Frequency Electrical Readout

Abstract

We present a simple micromanipulation technique to transfer suspended graphene flakes onto any substrate and to assemble them with small localized gates into mechanical resonators. The mechanical motion of the graphene is detected using an electrical, radio frequency (RF) reflection readout scheme where the time-varying graphene capacitor reflects a RF carrier at f = 5-6 GHz producing modulation sidebands at f ± f(m). A mechanical resonance frequency up to f(m) = 178 MHz is demonstrated. We find both hardening/softening Duffing effects on different samples and obtain a critical amplitude of ~40 pm for the onset of nonlinearity in graphene mechanical resonators. Measurements of the quality factor of the mechanical resonance as a function of dc bias voltage V(dc) indicates that dissipation due to motion-induced displacement currents in graphene electrode is important at high frequencies and large V(dc).

Graphene Optomechanics Realized at Microwave Frequencies

“…The driven motion of a graphene mechanical resonator was observed by coupling to an off-chip tank circuit [9]; however, the coupling was not sufficient to observe graphene thermal motion, not to mention cavity backaction.…”

Negative nonlinear damping of a multilayer graphene mechanical resonator

“…In this pursuit, large mechanical quality factors in graphene-based NEMS have been demonstrated as well [5,9]. Due to its atomic thickness, graphene-based NEMS also exhibit rich nonlinearity such as onset of Duffing nonlinearity and nonlinear damping at relatively small mechanical amplitudes [9][10][11]. These properties further make graphene an attractive candidate for developing optomechanical systems to reach the quantum regime of graphene motion [12], to store microwave photons [13], and could possibly be useful to understand dissipation in graphene NEMS for improved device performance [14].…”

Graphene Metallization of High-Stress Silicon Nitride Resonators for Electrical Integration

“…A key feature of a good resonator is a high quality factor, which conventional electronic filters have failed to meet. Nanoelectromechanical systems (NEMS) are of interest for sensing and signal processing applications because they can have the required high Q in addition to tunability and the potential for integration with silicon electronics 1,2,3,4 . Recently, stoichiometric silicon nitride resonators have been studied for their extremely high quality factor that can exceed one million, which originates from the high stress they possess 5,6,7 .…”