Staircase-like transfer characteristics in multilayer MoS₂ field-effect transistors

Abstract

Layered semiconductors, such as MoS 2 , have attracted interest as channel materials for post-silicon and beyond-CMOS electronics. Much attention has been devoted to the monolayer limit, but the monolayer channel is not necessarily advantageous in terms of the performance of field-effect transistors (FETs). Therefore, it is important to investigate the characteristics of FETs that have multilayer channels. Here, we report the staircase-like transfer characteristics of FETs with exfoliated multilayer MoS 2 flakes. Atomic force microscope characterizations reveal that the presence of thinner terraces at the edges of the flakes accompanies the staircase-like characteristics. The anomalous staircase-like characteristics are ascribable to a difference in threshold-voltage shift by charge transfer from surface adsorbates between the channel center and the thinner terrace at the edge. This study reveals the importance of the uniformity of channel thickness.

Welcome to Nano Express

“…I am confident that these key journal characteristics, combined with IOP's long-standing commitment and reputation as a leading society publisher, will ensure that Nano Express quickly becomes an established and valuable new addition to the publishing landscape within nanoscience. I hope that you enjoy reading our first papers by Urban et al [1], Ohoka et al [2], Mukherjee et al [3], Cherepanov et al [4], Tadeo et al [5], Kumar et al [6] and Haque et al [7] and that you will consider Nano Express as a rapid publication outlet for your own future research.…”