Staggered-layer-boosted flexible Bi2Te3 films with high thermoelectric performance

Lu, Yao; Zhou, Yi; Wu, Wei; Hu, Min; Huang, Xiege; D, Mao; Huang, Shan; Xie, Lin; Lin, Peipei; Jiang, Binbin; Zhu, Bin; Feng, Jianghe; Shi, Jianxu; Lou, Qing; Huang, Yi; Yang, Jianmin; Li, Jinhong; Li, Guodong; He, Jiaqing

doi:10.1038/s41565-023-01457-5

Cited by 57 publications

(18 citation statements)

References 68 publications

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“…However, similar to conductive polymers, carbon materials exhibit relatively low S. Inorganic bulk thermoelectric materials with high σ and S are already in practical use. However, they lack the flexibility to a great extent, although some flexible inorganic films [93,103,104] and ductile semiconductors [94,[105][106][107][108] have been explored. Besides, nano-structuring inorganic semiconductor materials can effectively enhance their flexibility [67,109].…”

Section: Introductionmentioning

confidence: 99%

Weavable thermoelectrics: advances, controversies, and future developments

Shi,

Sun,

et al. 2024

Mater. Futures

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Owing to the capability of the conversion between thermal energy and electrical energy and their advantages of lightweight, compactness, noise-free operation, and precision reliability, wearable thermoelectrics show great potential for diverse applications. Among them, weavable thermoelectrics, a subclass with inherent flexibility, wearability, and operability, find utility in harnessing waste heat from irregular heat sources. Given the rapid advancements in this field, a timely review is essential to consolidate the progress and challenge. Here, we provide an overview of the state of weavable thermoelectric materials and devices in wearable smart textiles, encompassing mechanisms, materials, fabrications, device structures, and applications from recent advancements, challenges, and prospects. This review can serve as a valuable reference for researchers in the field of flexible wearable thermoelectric materials and devices and their applications.

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Section: Introductionmentioning

confidence: 99%

Weavable thermoelectrics: advances, controversies, and future developments

Shi,

Sun,

et al. 2024

Mater. Futures

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“…[38][39][40] Considering the high thermoelectric performance of thermoelectric inorganics, researchers are keen to explore suitable thermoelectric inorganics with both high thermoelectric performance and certain flexibility. Some recently discovered semiconductors with inherent flexibility were reported, such as 𝛼-Ag 2 S, [41] InSe single crystals, [42] and 2D van der Waals crystals (Bi 2 Te 3 , SnSe 2 , MoS 2 , GaSe), [43][44][45][46][47] providing possible routes to meet this goal. Among them, 𝛼-Ag 2 S-based inorganic semiconductors exhibit excellent ductility and tunable electrical transport properties, making them prospective candidates in flexible and wearable thermoelectric electronics.…”

Section: Introductionmentioning

confidence: 99%

Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag₂S_0.5Se_0.5 Via Dual‐Phase Engineering

Wu,

Shi,

Mao

et al. 2023

Advanced Energy Materials

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Inorganic semiconductor Ag2S with excellent plasticity is highly desired in flexible and wearable thermoelectrics. However, the compromise between plasticity and thermoelectric performance limits the advances in Ag2S‐based thermoelectric materials and their devices. Here, a 0.5 mol.% Ag2Te‐alloyed Ag2S0.5Se0.5 bulk material is designed, which has a competitively high near‐room‐temperature figure of merit of ≈0.43 at 323 K and an ultra‐high bending strain of ≈32.5% without cracks. Introducing Ag2Te can optimize the carrier concentration and mobility of the Ag2S0.5Se0.5 matrix due to its metal‐like conducting features, leading to a maximum power factor of ≈6 µW cm−1 K−2. Simultaneously, Ag2Te induces Ag‐poor amorphous phase boundaries, serving as buffer layers to enhance the overall plasticity. Moreover, such amorphous phase boundaries combined with multiscale phonon scattering sources can significantly suppress the lattice thermal conductivity to ≈0.28 W m−1 K−1 at 323 K, leading to a high figure of merit. This study demonstrates an innovative route to simultaneously boost the thermoelectric performance and plasticity of ductile semiconductors.

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“…As a traditional family of thermoelectric materials, Bi 2 Te 3 also exhibits outstanding performance at room temperature. − For example, by using a large-area pulsed-laser deposition (PLD) technique to deposit a p-type Bi 2 Te 3 film of nanocrystal on an insulated silicon substrate, a PF of ∼25 μW cm –1 K –2 can be finally achieved . Wudil reported a remarkable increase in the thermoelectric performance of the n-type Bi 2 Te 3 film after Se doping .…”

Section: Introductionmentioning

confidence: 99%

High-Performance Thermoelectric Flexible Ag₂Se-Based Films with Wave-Shaped Buckling via a Thermal Diffusion Method

Zhang,

Nisar,

et al. 2023

ACS Appl. Mater. Interfaces

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Herein, an n-type Ag 2 Se thermoelectric flexible thin film has been fabricated on a polyimide (PI) substrate via a novel thermal diffusion method, and the thermoelectric performance is well-optimized by adjusting the pressure and temperature of thermal diffusion. All of the Ag 2 Se films are beneficial to grow (013) preferred orientations, which is conducive to performing a high Seebeck coefficient. By increasing the thermal diffusion temperature, the electrical conductivity can be rationally regulated while maintaining the independence of the Seebeck coefficient, which is mainly attributed to the increased electric mobility. As a result, the fabricated Ag 2 Se thin film achieves a high power factor of 18.25 μW cm −1 K −2 at room temperature and a maximum value of 21.7 μW cm −1 K −2 at 393 K. Additionally, the thermal diffusion method has resulted in a wave-shaped buckling, which is further verified as a promising structure to realize a larger temperature difference by the simulation results of finite element analysis (FEA). Additionally, this unique surface morphology of the Ag 2 Se thin film also exhibits outstanding mechanical properties, for which the elasticity modulus is only 0.42 GPa. Finally, a flexible round-shaped module assembled with Sb 2 Te 3 has demonstrated an output power of 166 nW at a temperature difference of 50 K. This work not only introduces a new method of preparing Ag 2 Se thin films but also offers a convincing strategy of optimizing the microstructure to enhance low-grade heat utilization efficiency.

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Staggered-layer-boosted flexible Bi2Te3 films with high thermoelectric performance

Cited by 57 publications

References 68 publications

Weavable thermoelectrics: advances, controversies, and future developments

Weavable thermoelectrics: advances, controversies, and future developments

Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag₂S_0.5Se_0.5 Via Dual‐Phase Engineering

High-Performance Thermoelectric Flexible Ag₂Se-Based Films with Wave-Shaped Buckling via a Thermal Diffusion Method

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Staggered-layer-boosted flexible Bi2Te3 films with high thermoelectric performance

Cited by 57 publications

References 68 publications

Weavable thermoelectrics: advances, controversies, and future developments

Weavable thermoelectrics: advances, controversies, and future developments

Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag2S0.5Se0.5 Via Dual‐Phase Engineering

High-Performance Thermoelectric Flexible Ag2Se-Based Films with Wave-Shaped Buckling via a Thermal Diffusion Method

Contact Info

Product

Resources

About

Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag₂S_0.5Se_0.5 Via Dual‐Phase Engineering

High-Performance Thermoelectric Flexible Ag₂Se-Based Films with Wave-Shaped Buckling via a Thermal Diffusion Method