Abstract:Staggered InGaN quantum wells (QWs) are analyzed as gain media for laser diodes to extend the lasing wavelength towards 500 nm. The calculation of band structure is based on a 6-band k·p method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect. Staggered InGaN QWs with two-layer and three-layer step-function like In-content InGaN QWs structures are investigated to enhance the optical gain for laser diodes emitting… Show more
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