Staggered heterojunctions-based tunnel-FET for application as a label-free biosensor

Chakraborty, Avik; Singha, Debasis; Sarkar, Arghyadeep

doi:10.1504/ijnp.2018.092681

Cited by 18 publications

(3 citation statements)

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“…On the other hand, it is most commonly utilised in medical diagnostic institutes and for the purpose of evaluating the quality of places. 30 In this context, biosensors based on FETs are capable of performing economically viable inspections of biological dangers in the environment and control of infectious diseases caused by viruses. The FET-based biosensor has many disadvantages, with the most prominent being the restriction imposed by the kT/q physical limitations on the maximum detection time.…”

Section: Applications and Advantages Of Tfet-based Biosensorsmentioning

confidence: 99%

Surface Potential Analysis of Dual Material Gate Silicon-Based Ferroelectric TFET for Biosensing Application

Venkatesh,

Parthasarathy,

Arun Kumar

2024

ECS J. Solid State Sci. Technol.

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By means of a dielectric modulation method, this research offers the first ever 2D analytical model for the surface potential of a dual material gate Ferroelectric-tunnel-field effect transistor (DMG-Fe-TFET) device used in an enzyme-free biosensor. Compared to a device with a single material gate, the sensitivity of a device with a gate made of two distinct metals (M1-M2) is improved by an increase in tunnelling width at the secondary tunnelling junction. This model accounts for the change in surface potential caused by varying the value, position, and fill factor of the target biomolecules. Several distinct device architectures are used to enhance the efficiency of the envisaged Fe-TFET in the nanoscale range. The DMG-Fe-TFET is one of many cutting-edge FET topologies that can reduce the impact of short-channel effects because of its adaptability. The surface potential can be expressed by computing the two-dimensional Poisson's equation using the parabolic-potential approach. The critical voltage is determined by using the minimal surface potential model. The percent change in the threshold voltage is used to determine the sensitivity of the model. Researchers have investigated how the dimensions of the Nano cavity and other parts of the device affect its sensitivity.

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Section: Applications and Advantages Of Tfet-based Biosensorsmentioning

confidence: 99%

Surface Potential Analysis of Dual Material Gate Silicon-Based Ferroelectric TFET for Biosensing Application

Venkatesh,

Parthasarathy,

Arun Kumar

2024

ECS J. Solid State Sci. Technol.

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“…In case of a double-gate junctionless transistor, the 𝑉 is estimated by constant current method (𝑉 =𝑉 ) [29].…”

Section: Ivthreshold Voltage Modellingmentioning

confidence: 99%

Trench Dual Gate Junctionless Field Effect Transistor

DHAR,

Poddar,

Roy

2024

JICS

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Diversified biomolecules sensing is turning out to be the most promising area of research due to ever decreasing healthy lifestyle. Field effect transistorized biosensing approach puts its signature as label free, portable and also very careful pathway. In this present work a trench structured dielectric modulated double gate junction-less field effect transistor (TG-DMJLFET) is urbanized using SILVACO ATLAS simulator for label free detection of biomolecules. The developed structure has two vertically positioned gates in distinct trenches. For immobilizing biomolecules, two cavities are formed in the gate oxide region for dielectric modulation. The dielectric constant (k) has been varied over a wide range of 1.54 (Uricase) to 12(Gelatin) signifying the sensing of diverse charged biomolecules. The sensitivity is evaluated in terms of threshold voltage shift and transconductance . The in-depth electrostatic analysis is illustrated in terms of central potential ,energy band diagram ,drive current and also by the depiction of the electric field .In case of charged biomolecules, the shift in threshold voltage is obtained as 350 mV for change in the di-electric constant (k) ranging from 1.54 to 12. The transconductance alteration is observed as 1.94×10-5 when the k is changed from 3.46 to 12 .The device has showed excellent performance in biomolecules sensing.

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“…JLTFETs are much easier to fabricate, less prone to short-channel effects (SCE), and have an SS below 60. Chakraborty et al [26] proposed the a for a surrounding gate JLTFET biosensor operated using the dielectric modulation technique. Gao [27] proposed an ultrasensitive biosensor for point-of-care diagnostics.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Simulation of a TFET-Based Label-Free Biosensor with Enhanced Sensitivity

Choudhury,

Baishnab,

Guha

et al. 2023

Chemosensors

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This study discusses the use of a triple material gate (TMG) junctionless tunnel field-effect transistor (JLTFET) as a biosensor to identify different protein molecules. Among the plethora of existing types of biosensors, FET/TFET-based devices are fully compatible with conventional integrated circuits. JLTFETs are preferred over TFETs and JLFETs because of their ease of fabrication and superior biosensing performance. Biomolecules are trapped by cavities etched across the gates. An analytical mathematical model of a TMG asymmetrical hetero-dielectric JLTFET biosensor is derived here for the first time. The TCAD simulator is used to examine the performance of a dielectrically modulated label-free biosensor. The voltage and current sensitivity of the device and the effects of the cavity size, bioanalyte electric charge, fill factor, and location on the performance of the biosensor are also investigated. The relative current sensitivity of the biosensor is found to be about 1013. Besides showing an enhanced sensitivity compared with other FET- and TFET-based biosensors, the device proves itself convenient for low-power applications, thus opening up numerous directions for future research and applications.

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Staggered heterojunctions-based tunnel-FET for application as a label-free biosensor

Cited by 18 publications

References 0 publications

Surface Potential Analysis of Dual Material Gate Silicon-Based Ferroelectric TFET for Biosensing Application

Surface Potential Analysis of Dual Material Gate Silicon-Based Ferroelectric TFET for Biosensing Application

Trench Dual Gate Junctionless Field Effect Transistor

Modeling and Simulation of a TFET-Based Label-Free Biosensor with Enhanced Sensitivity

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