We
demonstrate the possibility of engineering the optical properties
of transition metal dichalcogenide heterobilayers when one of the
constitutive layers has a Janus structure. We investigate different
MoS2@Janus layer combinations using first-principles methods
including excitons and exciton–phonon coupling. The direction
of the intrinsic electric field from the Janus layer modifies the
electronic band alignments and, consequently, the energy separation
between dark interlayer exciton states and bright in-plane excitons.
We find that in-plane lattice vibrations strongly couple the two states,
so that exciton–phonon scattering may be a viable generation
mechanism for interlayer excitons upon light absorption. In particular,
in the case of MoS2@WSSe, the energy separation of the
low-lying interlayer exciton from the in-plane exciton is resonant
with the transverse optical phonon modes (40 meV). We thus identify
this heterobilayer as a prime candidate for efficient generation of
charge-separated electron–hole pairs.