Stacking-Order Effect on Spin-Orbit Torque, Spin Hall Magnetoresistance, and Magnetic Anisotropy in 
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 Bilayers

Ueda, Kunihiro; Moriuchi, Naoki; Fukushima, Kunihiko; Kida, Takanori; Hagiwara, Masayuki; Matsuno, Jobu

doi:10.1103/physrevapplied.16.034039

Cited by 6 publications

(2 citation statements)

References 73 publications

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“…Epitaxial thin films were realized on singlecrystalline TiO 2 substrates either in a pure O 2 atmosphere [113] or in an O 2 /Ar gas mixture [139]. Heterostructures composed of spin-orbit-coupled IrO 2 and ferromagnetic permalloys, such as Ni 81 Fe 19 and Co 40 Fe 40 B 20 , were deposited in situ in DC or RF sputtering systems for spin transport studies [140][141][142][143][144]. The depositions were conducted either at room temperature followed by a post-annealing process [141] or directly at elevated temperatures [140,142].…”

Section: Sputtering Growthmentioning

confidence: 99%

Recent progress on topological semimetal IrO₂: electronic structures, synthesis, and transport properties

Zhang,

Coughlin,

et al. 2024

J. Phys.: Condens. Matter

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5d transition metal oxides, such as iridates, have attracted significant interest in condensed matter physics throughout the past decade owing to their fascinating physical properties that arise from intrinsically strong spin-orbit coupling (SOC) and its interplay with other interactions of comparable energy scales. Among the rich family of iridates, iridium dioxide (IrO2), a simple binary compound long known as a promising catalyst for water splitting, has recently been demonstrated to possess novel topological states and exotic transport properties. The strong SOC and the nonsymmorphic symmetry that IrO2 possesses introduce symmetry-protected Dirac nodal lines (DNLs) within its band structure as well as a large spin Hall effect in the transport. Here, we review recent advances pertaining to the study of this unique SOC oxide, with an emphasis on the understanding of the topological electronic structures, syntheses of high crystalline quality nanostructures, and experimental measurements of its fundamental transport properties. In particular, the theoretical origin of the presence of the fourfold degenerate DNLs in band structure and its implications in the angle-resolved photoemission spectroscopy measurement and in the spin Hall effect are discussed. We further introduce a variety of synthesis techniques to achieve IrO2 nanostructures, such as epitaxial thin films and single crystalline nanowires, with the goal of understanding the roles that each key parameter plays in the growth process. Finally, we review the electrical, spin, and thermal transport studies. The transport properties under variable temperatures and magnetic fields reveal themselves to be uniquely sensitive and modifiable by strain, dimensionality (bulk, thin film, nanowire), quantum confinement, film texture, and disorder. The sensitivity, stemming from the competing energy scales of SOC, disorder, and other interactions, enables the creation of a variety of intriguing quantum states of matter.

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Section: Sputtering Growthmentioning

confidence: 99%

Recent progress on topological semimetal IrO₂: electronic structures, synthesis, and transport properties

Zhang,

Coughlin,

et al. 2024

J. Phys.: Condens. Matter

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“…Moreover, a non-magnetic spinel oxide replaced from Pt enables us to grow all oxide epitaxial structure, highlighting that the high-quality interface can be a good platform for pursuing intriguing spin-current physics. One of the suitable candidates is LiIr 2 O 4, 39) which would be an efficient spin current source since recent reports have shown large spin current generation arising from 5d iridium oxides [40][41][42][43][44][45] with strong spin-orbit coupling. In addition to the SMR measurement, other approaches such as the spin pumping measurement would provide further understanding of the oxide interface based on the spinel ferrite.…”

mentioning

confidence: 99%

Effect of interface quality on spin Hall magnetoresistance in Pt/MgFe₂O₄ bilayers

Sugino,

Ueda,

Kida

et al. 2023

Appl. Phys. Express

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We report on spin Hall magnetoresistance (SMR) in bilayers composed of Pt and magnetic insulator MgFe2O4 (MFO) with spinel structure. The Pt thickness dependence of the SMR reveals that annealing of the MFO surface before depositing the Pt layer is crucial for a large SMR with better interface quality. We also found that oxygen pressure during the MFO growth hardly affects the SMR while it influences on magnetic property of the MFO film. Our findings provide important clues to further understand the spin transport at interfaces containing magnetic insulators, facilitating development of low power consumption devices.

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Current Induced Field‐Free Switching in a Magnetic Insulator with Enhanced Spin‐Orbit Torque

Bai,

Li,

et al. 2024

Adv Elect Materials

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The energy‐efficient spin‐orbit torque (SOT) based devices are essential for future memory and logic technologies. To realize a deterministic switching, an external in‐plane magnetic field is usually needed to break the symmetry, which becomes an obstacle for device applications. Here, a field‐free switching in a perpendicularly magnetized yttrium iron garnet covered with an oblique deposited Pt with nitrogen incorporation is demonstrated. The spin‐orbit torque efficiency is enhanced with the increasing incorporation ratio of nitrogen in Pt. The maximum effective spin Hall angle of Pt(N) can reach 0.113, which is almost two times larger than that of pure Pt in Pt/YIG. Meanwhile, the switching current density is reduced with the incorporation of nitrogen. These findings open a route toward high‐efficiency SOT driven spintronic devices based on magnetic insulators.

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Stacking-Order Effect on Spin-Orbit Torque, Spin Hall Magnetoresistance, and Magnetic Anisotropy in Ni81Fe19–IrO2 Bilayers

Cited by 6 publications

References 73 publications

Recent progress on topological semimetal IrO₂: electronic structures, synthesis, and transport properties

Recent progress on topological semimetal IrO₂: electronic structures, synthesis, and transport properties

Effect of interface quality on spin Hall magnetoresistance in Pt/MgFe₂O₄ bilayers

Current Induced Field‐Free Switching in a Magnetic Insulator with Enhanced Spin‐Orbit Torque

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Stacking-Order Effect on Spin-Orbit Torque, Spin Hall Magnetoresistance, and Magnetic Anisotropy in Ni81Fe19–IrO2 Bilayers

Cited by 6 publications

References 73 publications

Recent progress on topological semimetal IrO2: electronic structures, synthesis, and transport properties

Recent progress on topological semimetal IrO2: electronic structures, synthesis, and transport properties

Effect of interface quality on spin Hall magnetoresistance in Pt/MgFe2O4 bilayers

Current Induced Field‐Free Switching in a Magnetic Insulator with Enhanced Spin‐Orbit Torque

Contact Info

Product

Resources

About

Recent progress on topological semimetal IrO₂: electronic structures, synthesis, and transport properties

Recent progress on topological semimetal IrO₂: electronic structures, synthesis, and transport properties

Effect of interface quality on spin Hall magnetoresistance in Pt/MgFe₂O₄ bilayers