Stacking fault-induced strengthening mechanism in thermoelectric semiconductor Bi2Te3

Huang, Xiege; Feng, Xiaobin; An, Qi; Huang, Ben; Zhang, Xiaolian; Lu, Zhongtao; Li, Guodong; Zhai, Pengcheng; Duan, Bo; Snyder, G. Jeffrey; Goddard, William A.; Zhang, Qingjie

doi:10.1016/j.matt.2023.07.017

Matter

2023

DOI: 10.1016/j.matt.2023.07.017

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Stacking fault-induced strengthening mechanism in thermoelectric semiconductor Bi2Te3

Xiege Huang

Xiaobin Feng

Qi An

et al.

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2024

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Cited by 6 publications

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High Thermoelectric Performance in Bismuth Telluride via Constructing MoSe₂‐2D Heterojunction

Xiong,

He,

Tian

et al. 2024

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Currently, the only thermoelectric (TE) materials commercially available at room temperature are those based on bismuth telluride. However, their widespread application is limited due to their inferior thermoelectric and mechanical properties. In this study, a strategy of growing a rigid second phase of MoSe2 is employed, in situ within the matrix phase to achieve n‐type bismuth telluride‐based materials with exceptional mechanical and thermoelectric properties. The in situ grown second phase contributes to both the electronic and lattice thermal conductivities. This is primarily attributed to the strong energy filtering effect, as the second phase forms a semi‐common lattice interfacial structure with the matrix phase during growth. Furthermore, for composites containing 2 wt% MoSe2, a maximum zT value of 1.24 at 373 K can be achieved. On this basis, 8‐pair TE module is fabricated and 1‐pair TE module is optimized using a homemade p‐type material. The optimized 1‐pair TE module generates a maximum output power of 13.6 µW, which is twice that of the 8‐pair TE module and four times more than the 8‐pair TE module fabricated by commercial material. This work facilitates the development of the TE module by presenting a novel approach to obtaining bismuth telluride‐based thermoelectric materials with superior thermoelectric and mechanical properties.

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High Thermoelectric Performance in Bismuth Telluride via Constructing MoSe₂‐2D Heterojunction

Xiong,

He,

Tian

et al. 2024

Small

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Photothermal synergistic high-sensitivity self-driven vertical asymmetric Te/Bi2Te3/In2O3 heterojunction near-infrared imaging photodetector

Zhao,

Wang,

et al. 2024

Chemical Engineering Journal

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Recent progress on two-dimensional van der Waals thermoelectric materials with plasticity

Yin,

Zhao,

Boping

et al. 2024

Journal of Materiomics

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Stacking fault-induced strengthening mechanism in thermoelectric semiconductor Bi2Te3

Cited by 6 publications

References 51 publications

High Thermoelectric Performance in Bismuth Telluride via Constructing MoSe₂‐2D Heterojunction

High Thermoelectric Performance in Bismuth Telluride via Constructing MoSe₂‐2D Heterojunction

Photothermal synergistic high-sensitivity self-driven vertical asymmetric Te/Bi2Te3/In2O3 heterojunction near-infrared imaging photodetector

Recent progress on two-dimensional van der Waals thermoelectric materials with plasticity

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Stacking fault-induced strengthening mechanism in thermoelectric semiconductor Bi2Te3

Cited by 6 publications

References 51 publications

High Thermoelectric Performance in Bismuth Telluride via Constructing MoSe2‐2D Heterojunction

High Thermoelectric Performance in Bismuth Telluride via Constructing MoSe2‐2D Heterojunction

Photothermal synergistic high-sensitivity self-driven vertical asymmetric Te/Bi2Te3/In2O3 heterojunction near-infrared imaging photodetector

Recent progress on two-dimensional van der Waals thermoelectric materials with plasticity

Contact Info

Product

Resources

About

High Thermoelectric Performance in Bismuth Telluride via Constructing MoSe₂‐2D Heterojunction

High Thermoelectric Performance in Bismuth Telluride via Constructing MoSe₂‐2D Heterojunction