Stacking Fault Energy of Si Nanocrystals Embedded in SiO2

Abstract

Si nanocrystals (Si nc) were produced by the implantation of Si + into a SiO 2 film on (100) Si, followed by high-temperature annealing. High-resolution transmission electron microscopy (HRTEM) observation has shown that a perfect dislocation (Burgers vector b = (1/2) 110 ) can dissociate into two Shockley partials (Burgers vector b = (1/6) 112 ) bounding a strip of stacking faults (SFs). The width of the SFs has been determined from the HRTEM image, and the stacking fault energy for Si nc has been calculated. The stacking fault energy for Si nc is compared with that for bulk Si, and the formation probability of defects in Si nc is also discussed. The results will shed a light on the dissociation of dislocations in nanoparticles.

New functional material: spark plasma sintered Si/SiO2 nanoparticles – fabrication and properties

“…36 and 37. We should also note that the conclusion in ref. 37 includes the prediction that defects should strongly inuence the photoluminescence emission.…”

“…Since the annealing temperature does not exceed the fabrication temperature, we believe that the improvement in quality is due to defect redistribution caused by both the annealing and decrease in particle size. 37,38 For example in ref. 37 dislocation dissociation in Si nanocrystals was demonstrated as a result of annealing.…”

“…37,38 For example in ref. 37 dislocation dissociation in Si nanocrystals was demonstrated as a result of annealing.…”

“…The overwhelming majority of silicon light-emitting nanostructures is based on thin-lm technology. [27][28][29][30][31][32][33][34][35][36][37] The thickness of the emitting region does not usually exceed tens of nanometers. The spark plasma sintering technique allows the fabrication of bulk nanostructured samples from which one would expect much higher luminescence intensity.…”