Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges

Meduňa, Mojmír; Kreiliger, Thomas; Prieto, Iván; Mauceri, Marco; Puglisi, Marco; Mancarella, F.; Via, F. La; Crippa, Danilo; Miglio, Leo; Känel, H. von

doi:10.4028/www.scientific.net/msf.858.147

Cited by 11 publications

(8 citation statements)

References 5 publications

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“…The out-of-equilibrium method of growth, low-energy plasmaenhanced chemical vapour deposition (LEPECVD) (Rosenblad et al, 1998), results in a dense network of micrometresized three-dimensional epitaxial crystals. The use of deeply patterned substrates, along with growth by LEPECVD, initially demonstrated for the growth of Ge on Si(001) (Falub et al, 2013;Isa, Pezzoli et al, 2015;Rozbořil et al, 2016), was further extended to other materials and growth techniques, such as GaAs growth by metal-organic vapour phase epitaxy (Bietti et al, 2013;Falub et al, 2014;Taboada et al, 2014Taboada et al, , 2016, GaN growth by plasma-assisted molecular beam epitaxy (Isa, Chè ze et al, 2015) and SiC growth by chemical vapour deposition Meduň a, Kreiliger et al, 2016). The basic principle behind the approach is that dislocations are confined close to the heterointerface, while the bulk of the crystal remains dislocation free (Marzegalli et al, 2013;Falub et al, 2013;Isa et al, 2013).…”

Section: Introductionmentioning

confidence: 99%

Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals

et al. 2018

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The scanning X-ray nanodiffraction technique is used to reconstruct the threedimensional distribution of lattice strain and Ge concentration in compositionally graded Si 1Àx Ge x microcrystals grown epitaxially on Si pillars. The reconstructed crystal shape qualitatively agrees with scanning electron micrographs and the calculated three-dimensional distribution of lattice tilt quantitatively matches finite-element method simulations. The grading of the Ge content obtained from reciprocal-space maps corresponds to the nominal grading of the epitaxial growth recipe. The X-ray measurements confirm strain calculations, according to which the lattice curvature of the microcrystals is dominated by the misfit strain, while the thermal strain contributes negligibly. The nanodiffraction experiments also indicate that the strain in narrow microcrystals on 2 Â 2 mm Si pillars is relaxed purely elastically, while in wider microcrystals on 5 Â 5 mm Si pillars, plastic relaxation by means of dislocations sets in. This confirms previous work on these structures using transmission electron microscopy and defect etching.

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Section: Introductionmentioning

confidence: 99%

Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals

et al. 2018

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“…Specific patterning of Si substrate has been proposed in order to further decrease the amount of extended defects. [9][10][11][12][13] Lower SF densities are observed at the surface of 3C-SiC layers grown on undulate, [14] pyramidal-shape, [15,16] and pillar-shape patterned substrates. [9,10] At this, however, the desired defect level for device performance (10 2 cm −1 ) has not been reached so far.…”

Section: Introductionmentioning

confidence: 99%

“…[9][10][11][12][13] Lower SF densities are observed at the surface of 3C-SiC layers grown on undulate, [14] pyramidal-shape, [15,16] and pillar-shape patterned substrates. [9,10] At this, however, the desired defect level for device performance (10 2 cm −1 ) has not been reached so far. [17][18][19] The effectiveness of growing techniques and their optimization strictly depend on the understanding of the evolution mechanisms of SFs and terminating them partial dislocations during deposition.…”

Section: Introductionmentioning

confidence: 99%

Nature and Shape of Stacking Faults in 3C‐SiC by Molecular Dynamics Simulations

Barbisan

Sarikov

Marzegalli

et al. 2021

Physica Status Solidi (b)

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Classical molecular dynamics simulations are employed to investigate the three-dimensional evolution of stacking faults (SFs), including the partial dislocation (PD) loops enclosing them, during growth of 3C-SiC layers on Si(001). It is shown that the evolution of single PD loops releasing tensile strain during the initial carbonization stage, commonly preceding 3C-SiC deposition, leads to the formation of experimentally observed V -or ∆-shaped stacking faults, the key role being played by the differences in the mobilities between Si-and C-terminated partial dislocation segments. Nucleation in the adjacent planes of PD loops takes place at later stage of 3C-SiC deposition, when slightly compressive-strain conditions are present. It is shown that such a process very efficiently decreases the elastic energy of the 3C-SiC crystal. The maximum energy decrease is obtained via the formation of triple stacking faults with common boundaries made up by PD loops yielding a zero total Burgers vector. Obtained results explain the experimentally observed relative abundance of compact microtwin regions in 3C-SiC layers as compared to the other stacking fault related defects.

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“…The method has been successfully applied to several heteroepitaxial systems such as Ge/Si [11,12,13], GaAs/Si [14,15], GaAs/Ge/Si [16] and GaN/Si [17]. It has already been demonstrated also for 3C-SiC/Si in References [9,18], with beneficial effects on the crystal quality [18] and a substantial decrease in defectivity [19,20].…”

Section: Introductionmentioning

confidence: 99%

Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach

et al. 2019

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3C-SiC is a promising material for low-voltage power electronic devices but its growth is still challenging. Heteroepitaxy of 3C-SiC on Si micrometer-sized pillars is regarded as a viable method to achieve high crystalline quality, minimizing the effects of lattice and thermal expansion mismatch. Three-dimensional micro-crystals with sharply-faceted profiles are obtained, eventually touching with each other to form a continuous layer, suspended on the underlying pillars. By comparing experimental data and simulation results obtained by a phase-field growth model, here we demonstrate that the evolution of the crystal morphology occurs in a kinetic regime, dominated by the different incorporation times on the crystal facets. These microscopic parameters, effective to characterize the out-of-equilibrium growth process, are estimated by a best-fitting procedure, matching simulation profiles to the experimental one at different deposition stages. Then, simulations are exploited to inspect the role of a different pillar geometry and template effects are recognized. Finally, coalescence of closely spaced crystals ordered into an hexagonal array is investigated. Two possible alignments of the pattern are compared and the most convenient arrangement is evaluated.

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Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges

Cited by 11 publications

References 5 publications

Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals

Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals

Nature and Shape of Stacking Faults in 3C‐SiC by Molecular Dynamics Simulations

Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach

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