Stacking‐Engineered Heterostructures in Transition Metal Dichalcogenides

Abstract

The layer-by-layer assembly of 2D transition metal dichalcogenide monolayer blocks to form a 3D stack, with a precisely chosen sequence/angle, is the newest development for these materials. In this way, one can create "van der Waals heterostructures (HSs)," opening up a new realm of materials engineering and novel devices with designed functionalities. Herein, a detailed systematic review of transition metal dichalcogenide stacking-engineered heterostructures, from controllable fabrication to typical characterization, and stacking-correlated physical behaviors is presented. Furthermore, recent advances in stacking design, such as stacking sequence, twist angles, and moiré superlattice heterojunctions, are also comprehensively summarized. Finally, the remaining challenges and possible strategies for using stacking engineering to tune the properties of 2D materials are also outlined.

Interlayer Coupling Dependent Discrete H → T′ Phase Transition in Lithium Intercalated Bilayer Molybdenum Disulfide

“…To tune the phase and stacking order of 2D TMDC materials, a number of strategies have been developed that include interlayer coupling, , doping, , charge transfer, , strain, , thermal annealing, substrate engineering, , CVD growth condition controlling, energetic electron beam irradiation, , etc. The associated dynamics are also probed by different tools like laser confocal microscopy, X-ray diffraction, scanning probe microscopy, Raman spectroscopy, and transmission electron microscopy (TEM) .…”

Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices

“…Not only limited to electronic or optoelectronic devices, but researchers are also continuously putting efforts into designing conventional or different structures with new combinations to explore the potential of the 2D framework in a new field and optimize the device's performance. ( Guo et al., 2021 ; Kundu et al., 2021 ; Wang et al., 2021b ) Most HS-based FET and TFET devices are drawn for electronics and low-power usages. First, the challenges associated with their performance are addressed, followed by possible pathways for optimization.…”

Coupling of N‐Doped Mesoporous Carbon and N‐Ti3C2 in 2D Sandwiched Heterostructure for Enhanced Oxygen Electroreduction

“…[24][25][26][27][28][29][30][31] Additionally, like other 2D materials, the electronic struc ture of MXene can be apparently optimized through simple heteroatom (especially nitrogen) modification, resulting into the effectively improved property for certain appli cations. [9,24,[32][33][34] Based on the MXene for constructing 2D hetero geneous structure, the commonly used strategy is layerbylayer stacking, [35][36][37][38][39][40][41][42][43][44][45][46] which seriously ignores the average quality of the product and wastes a large number of active sites. Consequently, it is totally unfavorable to explore the interface interactions of 2D heterostructure.…”