Stacking-dependent band gap and quantum transport in trilayer graphene

Bao, Wenzhong; Jing, Lei; Velasco, Jairo; Lee, Y.-W.; Liu, Gang; Tran, David; Standley, Brian; Aykol, Mehmet; Cronin, Stephen B.; Smirnov, Dmitry; Koshino, Mikito; McCann, Edward; Bockrath, Marc; Lau, Chun Ning

doi:10.1038/nphys2103

Cited by 458 publications

(507 citation statements)

References 36 publications

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“…25,26 Unlike bilayer graphene, gap-opening in trilayer graphene depends on the stacking order of the layers, and notably for ABA (Bernal) stacking it remains metallic even in the presence of a perpendicular electric field. 2,[21][22][23][24] Generally, the fabrication, and thus the stacking order, of trilayer graphene devices relies on the mechanical exfoliation of graphite crystals. 1 Although mechanical exfoliation of graphene from graphite is an effective and successful sample preparation method for fundamental research, it is found that roughly 60% of trilayer samples prepared this way have a pure ABA stacking order, while the remainder exhibit mixed ABA-ABC stacking orders.…”

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confidence: 99%

Transport Gap Opening and High On–Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries

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Huang

et al. 2015

ACS Nano

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Graphene is a single-atom-thick carbon sheet with extraordinary properties unrivalled by any other known material, 1À7 which will likely lead to a revolution in many areas of technology. 8 It displays linear band dispersion, 9,10 massless Dirac Fermions, 11 and extremely high mobility. 12 Potentially, graphene-based electronics could consist of just one or a few layers of graphene; however, the absence of a band gap presents a conundrum for the implementation of conventional device architectures, similar to those based on semiconducting materials. 13À18 Several methods have been proposed for opening band or transport gaps in graphene, such as patterning single-layer graphene into narrow ribbons, 19 introducing nanoholes into the graphene sheets, 20 applying a perpendicular

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confidence: 99%

Transport Gap Opening and High On–Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries

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Huang

et al. 2015

ACS Nano

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“…5 These important technologies typically use graphene produced by chemical vapor deposition (CVD) 6 and other scalable methods, yet important fundamentals questions concerning heterogeneous electron transfer (ET) at such materials -intrinsic to many of these applications-remain to be addressed. Electrical measurements have revealed that the electron mobility 7 and the electronic band structure 8 are sensitive to the number of graphene layers and their stacking order, with implications for electrochemistry. In this communication, we thus seek to elucidate how both the number of graphene layers and arrangement of the layers influence heterogeneous ET kinetics.…”

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Structural Correlations in Heterogeneous Electron Transfer at Monolayer and Multilayer Graphene Electrodes

et al. 2012

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ABSTRACT:As a new form of carbon, graphene is attracting intense interest as an electrode material with widespread applications. In the present study, the heterogeneous electron transfer (ET) activity of graphene is investigated using scanning electrochemical cell microscopy (SECCM), which allows electrochemical currents to be mapped at high spatial resolution across a surface for correlation with the corresponding structure and properties of the graphene surface. We establish that the rate of heterogeneous ET at graphene increases systematically with the number of graphene layers, and show that the stacking in multilayers also has a subtle influence on ET kinetics.Graphene-based materials are having a huge impact in electrochemistry and electrochemical technologies, with promising applications in areas such as supercapacitors, 1 batteries, 2 electrocatalytic supports, 3 sensors for electroanalysis 4 and transparent electrodes. 5 These important technologies typically use graphene produced by chemical vapor deposition (CVD) 6 and other scalable methods, yet important fundamentals questions concerning heterogeneous electron transfer (ET) at such materials -intrinsic to many of these applications-remain to be addressed. Electrical measurements have revealed that the electron mobility 7 and the electronic band structure 8 are sensitive to the number of graphene layers and their stacking order, with implications for electrochemistry. In this communication, we thus seek to elucidate how both the number of graphene layers and arrangement of the layers influence heterogeneous ET kinetics.Graphene grown by CVD on nickel substrates 9 (see Supporting Information section 1) was optimal for the present study because it presents a heterogeneous continuous layer of microsized multilayered flakes, which can be addressed with high resolution scanning electrochemical cell microscopy (SECCM). [10][11][12][13] Thus, on one sample it is possible to make thousands of individual electrochemical (EC) measurements at different locations and relate these to the corresponding graphene structure. This provides datasets on a scale that would be unfeasible with conventional photolithographic techniques of the type employed in recent EC studies of exfoliated graphene. [14][15][16] In order to study the unambiguous electrochemical response of graphene without any interference from a conductive substrate, CVD graphene layers were transferred to a silicon substrate with a 300 nm thermal grown oxide layer. This substrate allowed optical visualization and identification of the morphological film features characteristic of graphene, 17,18 for direct correlation with the local electrochemistry. Importantly, the approach described herein makes possible the study of graphene surfaces with minimal intrusion and avoids the need for any post-processing lithographic step, which may result in unavoidable damage and possible interference of residues. 19 Ferrocene-derivatives have proven particularly suitable for the study of the ET activity of sp 2 ca...

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“…7,13,14,17,18,20,22 We measure the resistance R between different pairs of voltage probes in the temperature range of 1.5 K to 200 K while varying the top and bottom gate voltage V tg and V bg . Both four-terminal standard lock-in techniques and two-terminal DC techniques are used to measure the resistances as they vary by six orders of magnitude in different portion of the device.…”

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Transport Studies of Dual-Gated ABC and ABA Trilayer Graphene: Band Gap Opening and Band Structure Tuning in Very Large Perpendicular Electric Fields

et al. 2013

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Stacking-dependent band gap and quantum transport in trilayer graphene

Cited by 458 publications

References 36 publications

Transport Gap Opening and High On–Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries

Transport Gap Opening and High On–Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries

Structural Correlations in Heterogeneous Electron Transfer at Monolayer and Multilayer Graphene Electrodes

Transport Studies of Dual-Gated ABC and ABA Trilayer Graphene: Band Gap Opening and Band Structure Tuning in Very Large Perpendicular Electric Fields

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