Stacking-dependent anomalous valley Hall effect in bilayer Janus VSCl

Valleytronics in two-dimensional magnetic materials

“…In addition to monolayer magnetic valleytronic materials, there are also a variety of magnetic valleytronic materials with multilayers [144][145][146][147] and those with magnetic substrate [148][149][150][151][152][153][154][155][156][157][158][159][160][161][162][163]. The valley spontaneous polarization occurs only when the magnetization has an out-of-plane component.…”

Coexisting Ferroelectric, Ferromagnetic, and Ferrovalley Polarizations in Single Quintuple Layer ReAlGe2X6 (X = S, Se)

“…In these materials, ferroic orders primarily arise from symmetry-breaking induced orbital order polarization, fostering a significant electric-valley coupling criterion for the advancement of sophisticated control unit devices. ,− However, intriguing electric-valley coupling is rarely observed in natural monolayer structures. In general, FV order typically emerges in d-orbital systems with spatial inversion false( scriptP false) asymmetry while maintaining the electric depolarized state. , Despite the production of a magnetic moment by unpaired d-electrons and the induction of orbital and valley polarization, this process tends to inhibit FE distortion, adhering to the so-called d 0 rule. , To overcome this challenge, mechanisms identified in previous studies include Cu d 10 FE + Cr d 3 orbital polarization (e.g., CuCrP 2 S 6 − ), central ion vertical displacement-induced d-electron ferroic order polarization (e.g., H′-Co 2 CF 2 ), and multiferroic van der Waals heterojunctions (e.g., VSe 2 /Sc 2 CO 2 , VSe 2 /Al 2 S 3 ), as well as bilayer FV with sliding ferroelectricity. ,,− Nonetheless, these approaches often face challenges, such as unavoidable lattice mismatch and weak electric-valley polarization. Moreover, the in-plane magnetocrystalline anisotropy energy (MAE) and the low Curie temperature ( T C ) also pose significant challenges to the practical application of FM and FV orders in multiferroic materials.…”

Defect effects on the electronic, valley, and magnetic properties of the two-dimensional ferrovalley material VSi2N4

“…To date, a number of 2D ferrovalley materials have been predicted in theory, such as MX 2 (M = transition metal, X = S, Se, and Te), 18,19 MY 2 (M = transition metal, Y = Cl, Br, and I), 20–23 and Cr 2 X 3 , 24 as well as their Janus structures. 25–31 For 2D ferrovalley materials, exploring the magnetic anisotropy, spin–valley coupling, and anomalous valley Hall effect is the main focus of current research. Based on the proposed 2D ferrovalley monolayers, constructing multiferroic van der Waals layers is another attractive category to widen their application potential and realize electric-controlled spin–valley properties.…”