Stacked Top Gate Dielectrics in Dual Gate Ion Sensitive Field Effect Transistors: Role of Interfaces

Bhatt, Deepa; Kumar, Narendra; Panda, Siddhartha

doi:10.1021/acsaelm.9b00267

Cited by 11 publications

(31 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A deposition pressure of 9.0 × 10 –3 mbar was used for deposition of a-IGZO as a semiconductor. The deposited a-IGZO film was further annealed in the presence of oxygen at 350 °C for 1 h as discussed in our previous study. , The 150 nm Al as the source/drain electrode was deposited over the a-IGZO film using a thermal evaporator. For TFT H, 50 nm HfO 2 was deposited on one of the BG-TFTs by sputtering at 80 W power in an Ar atmosphere.…”

Section: Methodsmentioning

confidence: 99%

“…The simulations were performed using an ATLAS device simulator and MATLAB. The equations and the model used in this simulation have been explained in our previous study. − In this work, we performed simulations using different TG dielectrics for sensitivity enhancement and validation of experimental results.…”

Section: Simulationsmentioning

confidence: 99%

“…The deposited a-IGZO film was further annealed in the presence of oxygen at 350 °C for 1 h as discussed in our previous study. 20,22 The 150 nm Al as the source/drain electrode was deposited over the a-IGZO film using a thermal evaporator. For TFT H, 50 nm HfO 2 was deposited on one of the BG- 22 of size 1 × 10 mm 2 was fabricated on both BG-TFTs using a photolithography process with SU-8 epoxy for pH sensing, as shown in Figure 1e,f.…”

Section: Introductionmentioning

confidence: 99%

“…A stacked TG dielectric (HfO 2 /Y 2 O 3 ) was used to investigate the interface of HfO 2 and Y 2 O 3 with a-IGZO. A reservoir with dimensions of 10 × 1 mm 2 was formed on the TG dielectric by SU-8 epoxy for sensing measurements. The experimental results were validated with simulations using the ATLAS device simulator and MATLAB …”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

High Sensitivity of Dual Gate ISFETs Using HfO₂ and HfO₂/Y₂O₃ Gate Dielectrics

Bhatt

Panda

2021

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

Hafnium oxide gate dielectrics have elicited interest in dual gate ion-sensitive field-effect transistors because of their high dielectric constant, high band gap, and a good interface with amorphous indium gallium zinc oxide semiconductors. In this work, we have studied the pH sensing of double-gate ion-sensitive field-effect transistors with hafnium oxide and a stack of hafnium oxide/yttrium oxide as the top gate dielectric, and such a study has not been conducted earlier. Sputter deposition and postannealing of hafnium oxide and hafnium oxide/yttrium oxide were studied for reduction of defects at the interface of the semiconductor and the gate dielectric. A high pH sensitivity of 718 mV/pH was obtained with the stack of hafnium oxide/yttrium oxide, while with only hafnium oxide as the gate dielectric resulted in a pH sensitivity of 917 mV/pH but with lower mobility. The experimental results of pH sensitivity were benchmarked with the simulation and theoretical results. The highlights of the work include identification of diffusion of hafnium and yttrium into gallium to improve the sensitivity of the pH sensor by modification of the gate dielectric–semiconductor interface. High pH sensing of such devices makes them promising for various analytical and biomedical applications.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Simulationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

High Sensitivity of Dual Gate ISFETs Using HfO₂ and HfO₂/Y₂O₃ Gate Dielectrics

Bhatt

Panda

2021

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

show abstract

“…To overcome the shortcomings of single high-k gate dielectrics, a laminated structure was designed. The reported lamination designs include inorganic/inorganic structures, such as HfGdO/HfTiO, Al 2 O 3 /HfTiO, HfO 2 /Gd 2 O 3 , Al 2 O 3 /perovskite/Al 2 O 3 , Ta 2 O 5 /Y 2 O 3 , and Al 2 O 3 /Ta 2 O 5 , and organic/inorganic composite laminates, such as HfO X /PAE/HfO X , SiO X /Stb/SiO X , and ZrO/PAE/ZrO . Two or more kinds of materials with complementary properties are used to construct double-layer or multilayer gate dielectrics, which can improve the above shortcomings to a certain extent.…”

Section: Introductionmentioning

confidence: 99%

Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al₂O₃-Passivated High-k HfGdO_x Dielectrics

Zhang

Lin

et al. 2020

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

High-speed operation and low-power-consumption requirements have accelerated the development of thin-film transistors (TFTs) with exploration of gate dielectrics. In this work, the integration of all-sputtering-derived HfGdO high-k gate dielectrics with amorphous InGaZnO (a-InGaZnO) films has been reported, yielding significant improvements in the performance of a-InGaZnO TFTs. By adjusting the multilayer dielectric sequence, TFT device performance can be precisely manipulated. It has been detected that a-InGaZnO TFTs with an optimized Al 2 O 3 /HfGdO dielectric configuration have demonstrated superior electrical performance, including a high field-effect mobility (μ FE ) of 23.3 cm 2 • V −1 •S −1 , a large on/off current ratio of 1.2 × 10 7 , a low subthreshold swing of 0.09 V/dec, and good stability under bias stress. Finally, a low-voltage-operated resistor-loaded unipolar inverter has been assembled on the base of Al 2 O 3 /HfGdO/a-InGaZnO TFTs, demonstrating full swing characteristics and high gain of ∼20. All of the experimental results indicate promising potentials for all-sputtering-derived Al 2 O 3 /HfGdO laminated dielectrics toward the achievement of low-cost, low-power-consumption, and largearea all-oxide optoelectronics.

show abstract

Readily Accessible Metallic Micro‐Island Arrays for High‐Performance Metal Oxide Thin‐Film Transistors

et al. 2022

View full text Add to dashboard Cite

versus conventional amorphous silicon TFTs, as well as large area processability at low temperatures. [13][14][15][16] Furthermore, MOTFTs are less affected by short channel effects. [17][18][19] As in other transistor technologies, MOTFT performance strongly depends on the intrinsic semiconductor channel properties as well as the channel interfacial characteristics, including that of the top surface. [20][21][22] Furthermore, MOTFTs are limited by uncontrollable back channel trap densities, restricting their application in high-resolution displays, as well as 3D and virtual reality devices. [7,[23][24][25][26][27] Recently, several strategies were reported to enhance the performance of MOTFTs by adopting new device architectures, including dual gate implantation, [28][29][30] high-k insulators, [31][32][33] and semiconducting heterostructures. [34][35][36][37][38] Among these strategies, low-dimensional bi-or multilayer heterostructures of different MOs have enhanced the carrier mobility and drive current in MOTFTs. [39,40] These improvements typically originate from confined free electrons within the potential well of the heterointerface between two semiconductors having large Fermi energy differences. [41] However, although these approaches are noteworthy, limitations in available component materials and control of leakage currents have compromised the fidelity of this platform. [37,38] Another approach to enhance performance Thin-film transistors using metal oxide semiconductors are essential in many unconventional electronic devices. Nevertheless, further advances will be necessary to broaden their technological appeal. Here, a new strategy is reported to achieve high-performance solution-processed metal oxide thin-film transistors (MOTFTs) by introducing a metallic micro-island array (M-MIA) on top of the MO back channel, where the MO is a-IGZO (amorphous indium-gallium-zinc-oxide). Here Al-MIAs are fabricated using honeycomb cinnamate cellulose films, created by a scalable breath-figure method, as a shadow mask. For IGZO TFTs, the electron mobility (µ e ) increases from ≈3.6 cm 2 V −1 s −1 to near 15.6 cm 2 V −1 s −1 for optimal Al-MIA dimension/ coverage of 1.25 µm/51%. The Al-MIA IGZO TFT performance is superior to that of controls using compact/planar Al layers (Al-PL TFTs) and Au-MIAs with the same channel coverage. Kelvin probe force microscopy and technology computer-aided design simulations reveal that charge transfer occurs between the Al and the IGZO channel which is optimized for specific Al-MIA dimensions/surface channel coverages. Furthermore, such Al-MIA IGZO TFTs with a high-k fluoride-doped alumina dielectric exhibit a maximum µ e of >50.2 cm 2 V −1 s −1 . This is the first demonstration of a micro-structured MO semiconductor heterojunction with submicrometer resolution metallic arrays for enhanced transistor performance and broad applicability to other devices.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.202205871.

show abstract

Stacked Top Gate Dielectrics in Dual Gate Ion Sensitive Field Effect Transistors: Role of Interfaces

Cited by 11 publications

References 39 publications

High Sensitivity of Dual Gate ISFETs Using HfO₂ and HfO₂/Y₂O₃ Gate Dielectrics

High Sensitivity of Dual Gate ISFETs Using HfO₂ and HfO₂/Y₂O₃ Gate Dielectrics

Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al₂O₃-Passivated High-k HfGdO_x Dielectrics

Readily Accessible Metallic Micro‐Island Arrays for High‐Performance Metal Oxide Thin‐Film Transistors

Contact Info

Product

Resources

About

Stacked Top Gate Dielectrics in Dual Gate Ion Sensitive Field Effect Transistors: Role of Interfaces

Cited by 11 publications

References 39 publications

High Sensitivity of Dual Gate ISFETs Using HfO2 and HfO2/Y2O3 Gate Dielectrics

High Sensitivity of Dual Gate ISFETs Using HfO2 and HfO2/Y2O3 Gate Dielectrics

Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al2O3-Passivated High-k HfGdOx Dielectrics

Readily Accessible Metallic Micro‐Island Arrays for High‐Performance Metal Oxide Thin‐Film Transistors

Contact Info

Product

Resources

About

High Sensitivity of Dual Gate ISFETs Using HfO₂ and HfO₂/Y₂O₃ Gate Dielectrics

High Sensitivity of Dual Gate ISFETs Using HfO₂ and HfO₂/Y₂O₃ Gate Dielectrics

Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al₂O₃-Passivated High-k HfGdO_x Dielectrics