Stacked Source/Drain Electrode Structure of InGaZnO Thin-Film-Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect

Kataoka, J.; Saito, Nobuyoshi; Ueda, Tomomasa; Tezuka, T.; Sawabe, Tomoaki; Ikeda, Keiji

doi:10.7567/ssdm.2018.ps-10-17

Cited by 2 publications

(2 citation statements)

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“…16,60,83) Also, in recent activity in Si-based memory technology fields, oxide TFT technologies have been actively researched and developed as 3D BEOL transistors and for vertical NAND memory cell applications. [84][85][86] Thus, the reviewed devices of CT-MTFTs also have great potential as future memory devices in various application fields. However, several approaches proposed in 4.2 cannot be universal solutions to improve the total performance of f-CT-MTFTs.…”

Section: Outlook and Summarymentioning

confidence: 99%

Charge-trap-assisted flexible nonvolatile memory applications using oxide-semiconductor thin-film transistors

Yoon

Yang

Kim

et al. 2019

Jpn. J. Appl. Phys.

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We introduce mechanically flexible nonvolatile memory thin-film transistors (MTFTs) for future highly functional flexible and stretchable electronic devices and systems. The proposed memory devices are uniquely composed of oxide-semiconductor thin films and operated with charge-trap and detrap mechanisms for nonvolatile memory operations. Charge-trap-assisted MTFTs (CT-MTFTs) using In-Ga-Zn-O active and ZnO charge-trap layers are designed and fabricated on flexible poly(ethylene naphthalate) and colorless polyimide films prepared on carrier glass substrates. We describe the fabrication processes and evaluation methodologies for realizing flexible CT-MTFTs in a detailed way and discuss related technical issues. The device characteristics and memory performance of the fabricated flexible CT-MTFTs, including when the devices are mechanically strained, are extensively discussed. We also propose further improvements for remaining issues on device performance from the viewpoints of memory operations and mechanical flexibility. © 2019 The Japan Society of Applied Physics PI (CPI) film substrates in Chap. 3. Furthermore, the memory operation mechanisms based on the device physics including the material properties and considerations on the designed device structures will be examined. Finally, in Chap. 4,

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Section: Outlook and Summarymentioning

confidence: 99%

Charge-trap-assisted flexible nonvolatile memory applications using oxide-semiconductor thin-film transistors

Yoon

Yang

Kim

et al. 2019

Jpn. J. Appl. Phys.

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“…In order to reduce R contact at the IGZO/ITO interface, we have proposed a stacked S/D structure of IGZO/tungsten (W) thin-film/ITO, which successfully demonstrated the reduction of R contact with suppressing L eff shortening even after 360 °C annealing. 20) In this paper, chemical bonding states of Ga, Zn and W at the IGZO/W/ITO interface were investigated in detail in order to reveal the cause of R contact reduction by inserting W thin film at the IGZO/ITO interface.…”

Section: Introductionmentioning

confidence: 99%

Tungsten/In–Sn–O stacked source/drain electrode structure of In–Ga–Zn–O thin-film transistor for low-contact resistance and suppressing channel shortening effect

Kataoka¹,

Saito²,

Ueda³

et al. 2019

Jpn. J. Appl. Phys.

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The reduction of source/drain (S/D) contact resistance by suppressing effective channel length (Leff) shortening after the high-temperature process is key to realizing integration of high-performance short-channel In–Ga–Zn–O (IGZO) thin-film transistors to 3D large-scale integration. In order to achieve this requirement, we propose a stacked S/D electrode structure of a metal thin film and In–Sn–O (ITO). By inserting around 2 nm tungsten thin film at the interface between the IGZO channel and ITO electrode, about 11 times improvement of on-current (drain current @ Vg = 20 V, Vd = 0.05 V, Lg/W = 0.8/2.4 μm) was achieved. Moreover, Leff shortening was also suppressed to less than 80 nm even after 360 °C annealing.

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Stacked Source/Drain Electrode Structure of InGaZnO Thin-Film-Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect

Cited by 2 publications

References 0 publications

Charge-trap-assisted flexible nonvolatile memory applications using oxide-semiconductor thin-film transistors

Charge-trap-assisted flexible nonvolatile memory applications using oxide-semiconductor thin-film transistors

Tungsten/In–Sn–O stacked source/drain electrode structure of In–Ga–Zn–O thin-film transistor for low-contact resistance and suppressing channel shortening effect

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