Stacked bilayer phosphorene: strain-induced quantum spin Hall state and optical measurement

Zhang, Tian; Lin, Jiahe; Yu, Yanmei; Chen, Xiangrong; Liu, Wu-Ming

doi:10.1038/srep13927

Cited by 70 publications

(39 citation statements)

References 60 publications

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“…The inverted states are labeled by | ñ p z and | ñ  p x y i . Such band-inversion character may indicate that the topological phase transition from a trivial state to a nontrivial topological state is happened for the dumbbell silicene as σ increases, which is similar to the band-inversion character in bilayer phosphorene [11] and antimonene [52] induced by strain. The Fermi level sitting outside the bulk gap for the dumbbell silicene when σ=-5.0% can be artificially adjusted inside the gap by applying a gate voltage.…”

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confidence: 75%

“…As opposed to three-dimensional (3D) one, its optical, electronic, mechanical and thermal properties are easily adjusted by external strains, defects, electric field, or stacking orders [5][6][7][8], and thus its realistic performance can also be readily improved through current microfabrication technology. 2D materials [9, 10] were first predicted with quantum spin Hall (QSH) effect, and recently more and more 2D materials have been confirmed as 2D topological insulators (TIs) [11][12][13][14], also known as QSH insulator. 2D TIs are novel materials characterized by a bulk energy gap and gapless spin-filtered edge states with the potential application in quantum computation and spintronics [15,16].…”

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confidence: 99%

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Dumbbell silicene: a strain-induced room temperature quantum spin Hall insulator

et al. 2016

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By the generalized gradient approximation in the framework of density functional theory, we find a new silicon allotrope (called dumbbell silicene) with high stability, which can turn a quantum spin Hall insulator with an inverted band gap through tuning external compression strain, just like in previous silicene. However, the obtained maximum topological nontrivial band gap about 12 meV under isotropic strain is much larger than that for previous silicene, and can be further improved to 36 meV by tuning extra anisotropic strain, which is sufficiently large to realize quantum spin Hall effect even at room-temperature, and thus is beneficial to the fabrication of high-speed spintronics devices. Furthermore, we confirm that the boron nitride sheet is an ideal substrate for the experimental realization of the dumbbell silicene under external strain, maintaining its nontrivial topology. These properties make the two-dimensional dumbbell silicene a good platform to study novel quantum states of matter, showing great potential for future applications in modern silicon-based microelectronics industry.Two-dimensional (2D) materials have been a focus of intense research in recent years [1][2][3][4]. As opposed to three-dimensional (3D) one, its optical, electronic, mechanical and thermal properties are easily adjusted by external strains, defects, electric field, or stacking orders [5][6][7][8], and thus its realistic performance can also be readily improved through current microfabrication technology. 2D materials [9, 10] were first predicted with quantum spin Hall (QSH) effect, and recently more and more 2D materials have been confirmed as 2D topological insulators (TIs) [11][12][13][14], also known as QSH insulator. 2D TIs are novel materials characterized by a bulk energy gap and gapless spin-filtered edge states with the potential application in quantum computation and spintronics [15,16]. Different from surface states of 3D TIs, which is only free from exact 180 0 -backscattering and suffers from scattering of other angles, the special edges of 2D TIs are topologically protected by the time reversal symmetry and can immune to nonmagnetic scattering and geometry perturbations, thus 2D TIs is better than 3D TIs for coherent nondissipative spin transport related applications.Graphene, a monolayer of carbon atoms forming a similar honeycomb lattice, hosts a miraculous electronic system, and thus becomes a perfect breeding ground for a variety of exotic quantum phenomena, such as quantum anomalous Hall effect (QAHE), Majorana fermions and superconductor [17][18][19]. Furthermore, massless Dirac fermions endow graphene with superior carrier mobility [20,21]. Unfortunately, its tiny band gap (about 8×10 −4 meV [22]) opened by spin-orbit coupling (SOC) effect seriously limits its device applications. Subsequently, a new QSH insulator silicene was synthesized with a relatively large spin-orbit gap of 1.55 meV [23,24]. Almost every striking property of graphene can be transferred to this innovative material. Indeed, these f...

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Dumbbell silicene: a strain-induced room temperature quantum spin Hall insulator

et al. 2016

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“…The most stable ground-state stacking in the bilayers is the AA-configuration. 27,28 The twisted bilayers with Moiré pattern can be considered to be a "mixture" of all possible stacking sequences. Thus the binding energy of the twisted structures is expected to be lower than that of AA-stacking.…”

Section: B Binding Energymentioning

confidence: 99%

“…Thus, understanding the influence of the stacking sequences on the nature of the interlayer interaction among monolayers has been of great fundamental interest. [23][24][25][26][27][28][29] Motivated by this, in this paper we explore the nature of the interlayer coupling and the modulation of the electronic and magnetic properties in twisted bilayers of blue phosphorus (β-P) 30,31 and grey arsenene (β-As), 32,33 both having similar crystal structure and physical properties. Among several possible 2D allotropes predicted for group-V elements, 34 β-P has already been reported experimentally, 35,36 along with a detailed atomistic study of its growth mechanism.…”

Section: Introductionmentioning

confidence: 99%

Interlayer decoupling in twisted bilayers of β-phosphorus and arsenic: A computational study

et al. 2019

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We investigate magnetism and band structure engineering in Moiré superlattice of blue phosphorus (β-P) and grey arsenene (β-As) bilayers, using ab initio calculations. The electronic states near the valence and conduction band edges have significant pz character in both the bilayers. Thus, twisting the layers significantly reduce the interlayer orbital overlap, leading to a decrease in the binding energy (up to ∼ 33%) and an increase in interlayer distance (up to ∼ 10%), compared to the most stable AA-stacking. This interlayer decoupling also results in a notable increase (up to ∼25-50%) of the bandgap of twisted bilayers, with the valance band edge becoming relatively flat with van-Hove singularities in the density of states. Thus, hole doping induces a Stoner instability, leading to ferromagnetic ground state, which is more robust in Moiré superlattices, than that of AA-stacked β-P and β-As. arXiv:1905.05951v1 [cond-mat.mtrl-sci] 15 May 2019 * bsomnath@iitk.

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“…Besides graphene, semiconducting 2D TMDs keep attracting much attention owing to their strong spin‐orbit coupling (inherently much stronger than in graphene) and spin and valley degrees of freedom, offering new opportunities toward valley spintronics . Recent first‐principles studies also reported on the magnetic ordering of phosphorene nanoribbons and the QSH state of bilayer phosphorene, stimulating further experimental and theoretical research.…”

Section: Property Optimizationmentioning

confidence: 99%

Atomistic mechanisms of van der Waals epitaxy and property optimization of layered materials

Choi

Cui

Wei

et al. 2017

WIREs Comput Mol Sci

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Since the first isolation of graphene from graphite in 2004, atomically thin or layered materials have been occupying the central stage of today's condensed matter physics and materials sciences because of their rich and exotic properties in two dimensions (2D). Many members of the ever-expanding 2D materials family, such as graphene, silicene, phosphorene, borophene, hexagonal boron nitride, transition metal dichalcogenides, and even the strong topological insulators, share the distinct commonality of possessing relatively weak van der Waals (vdW) interlayer coupling, whereas each member may invoke its own fabrication approaches, and is characterized by its unique properties. In this review article, we first discuss the major atomistic processes and related morphological evolution in the epitaxial growth of vdW layered materials, including nucleation, diffusion, feedstock dissociation, and grain boundaries. Representative systems covered include the vdW epitaxy of both monolayered 2D systems and their lateral or vdW-stacked heterostructures, emphasizing the vital importance of the vdW interactions in these systems. We also briefly highlight on some of the recent advances in the property optimization and functionalization of the 2D materials, especially in the fields of optics, electronics, and spintronics. /compmolsci 6 7 8 FIGURE 1 | Binding energies of C-C dimers on flat metal (111) surfaces with respect to the C-C distance (a) and the preference of C-C dimer formation on close-packed transition metal surfaces (b). The inset in (a) shows the top view of a C-C dimer on a closepacked metal surface. (Reprinted with permission from Ref 42.FIGURE 4 | Minimum energy paths of C diffusion within and between the different regions on (a) Cu(111) and (b) Ni (111). Here, Sub(1) and Sub(2) represent the first and second subsurface sites, respectively. The numbers in the horizontal axes correspond to the routes shown in the inset of (a). (

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Stacked bilayer phosphorene: strain-induced quantum spin Hall state and optical measurement

Cited by 70 publications

References 60 publications

Dumbbell silicene: a strain-induced room temperature quantum spin Hall insulator

Dumbbell silicene: a strain-induced room temperature quantum spin Hall insulator

Interlayer decoupling in twisted bilayers of β-phosphorus and arsenic: A computational study

Atomistic mechanisms of van der Waals epitaxy and property optimization of layered materials

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