Stable ultraviolet photoluminescence of nanoporous silicon

Silicon–Rich Silicon Oxide Thin Films Fabricated by Electro-Chemical Method

“…In the first part of this section we explain the effect of surface states on the PL properties of PS based on the ageing process in air. In the last part, we present the reason for the intense and stable luminescence of blue region which has been of great interest in recent studies (Gorelkinskii et al, 2008). Previous studies on the interaction of oxygen in air on the asprepared PS (Wolkin et al, 1999) show that: I) the as-prepared samples were well passivated by hydrogen and free of oxygen, ii) after exposure to air the samples were gradually passivated by oxygen, and the red-shift of PL spectral occurred as samples exposure to air and was nearly completed after ageing of 24 h. It was suggests that the ageing process can be divided into two periods: the first one in which the transition of the luminescence mechanism occurs after exposing the sample to air for a short time, and the second one in which the nonradiative center concentration is changed by oxygen passivation (Bui Huy et al, 2003).…”

Photoluminescence from intermediate phase silicon structure and nanocrystalline silicon in plasma enhanced chemical vapor deposition grown Si/SiO2multilayers

“…Because of its indirect band gap of 1.12 eV, bulk silicon is generally a very poor optical emission material. However, a great deal of research on nc-Si embedded in silicon oxide matrix has been conducted since the observation of PL in porous Si in 1990 [1], and it has been shown that thin films with nanometer scale silicon dots are efficient lightemission materials [2][3][4][5][6][7][8].…”