volume 147, issue 2-3, P258-261 2008
DOI: 10.1016/j.mseb.2007.10.001
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Abstract: In this paper, we report for the first time the observation from porous silicon (PS) the intense, narrow (∼0.12 eV) line of ultraviolet (UV) (375 nm) photoluminescence (PL) that in air is long-duration stable (at least few month). The intense UV line is created after exposure of PS sample in ambient air for 6 month at room temperature. The PS layers were fabricated by electrochemical etching in standard (HF-ethanol) electrolyte on high resistivity (∼3 k cm) 1 1 1 -oriented FZ wafer. Moreover boron-doped CZ-1 …

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