1996
DOI: 10.1016/0368-2048(96)02983-0
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Stable silicon photodiodes for absolute intensity measurements in the VUV and soft X-ray regions

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Cited by 121 publications
(49 citation statements)
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“…The photon flux is measured by a movable silicon p-n junction photodiode (Model AXUV-100G, IRD Inc.) placed just above the substrate. This commercial photodiode was developed for absolute photon-intensity measurements (Gullikson et al 1996;Korde et al 1993). It has been widely used in the various fields of science because of its 100% collection efficiency of photogenerated carriers (e.g., Boivin et al 1999;Stutman et al 1999), while the uncertainty in quantum efficiency is less than 10%.…”
Section: Methodsmentioning
confidence: 99%
“…The photon flux is measured by a movable silicon p-n junction photodiode (Model AXUV-100G, IRD Inc.) placed just above the substrate. This commercial photodiode was developed for absolute photon-intensity measurements (Gullikson et al 1996;Korde et al 1993). It has been widely used in the various fields of science because of its 100% collection efficiency of photogenerated carriers (e.g., Boivin et al 1999;Stutman et al 1999), while the uncertainty in quantum efficiency is less than 10%.…”
Section: Methodsmentioning
confidence: 99%
“…In order to obtain the absolute flux in number of photons per second, the measured photocurrent is multiplied by the photodiode quantum efficiency (Gullikson et al, 1996). Figs.…”
Section: Fluxmentioning
confidence: 99%
“…Photons penetrate the diodes and create electron-hole pairs in the active region (n-on-p junction). The resulting photocurrent should, in principle, be proportional to the incident radiation power 11,12 . AXUV diodes offer a time resolution of less than 500 ns 13 .…”
Section: A Axuv Diode Diagnosticmentioning
confidence: 99%