A convenient synthetic route to Ga-stabilized pnictogen-centered radicals and gallapnictenes by manipulation of pnictogen-carbon bond strengths is presented. Two equivalents of LGa (L = HC[C(Me)N(Dip)]2, Dip = 2,6-i-Pr2C6H3) react with Cp Ar AsCl2 (Cp Ar = C5(4-t-BuC6H4)5) with formation of the arsenic-centered radical [L(Cl)Ga]2As• 1. In contrast, the analogous reaction with TerSbCl2 (Ter = 2,6-Mes2C6H3; Mes = 2,4,6-Me3C6H2) yields the gallastibene LGa=SbTer 2 containing a Ga-Sb double bond, whereas reactions of DipSbCl2 with one and two equivalents of LGa give the monoinsertion and bisinsertion products L(Cl)GaSb(ClDip 3 and [L(Cl]Ga]2SbDip 4, respectively. 1 -4 were structurally characterized by single crystal X-ray diffraction. The description of 1 as arsenic-centered radical is consistent with results of EPR and DFT studies. The π-bonding in LGa=SbTer 2 is estimated to 10.68 kcal mol -1 by variable-temperature (VT) NMR spectroscopy, and DFT studies reveal a significant π-bonding interaction between Sb and Ga.
ASSOCIATED CONTENTThe Supporting Information is available free of charge via the Internet at http://pubs.acs.org. Experimental procedures, 1 H, 13 C NMR, IR and EPR spectra, crystallographic details, bond lengths and angles of 1 -4 and results from quantum chemical calculations (pdf).