Stable metal–insulator transition in epitaxial SmNiO3 thin films

Ha, Sieu D.; Otaki, Miho; Jaramillo, Rafael; Podpirka, Adrian; Ramanathan, Shriram

doi:10.1016/j.jssc.2012.02.047

Cited by 44 publications

(43 citation statements)

References 18 publications

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“…This is reasonable from synthesis perspective and consistent with SNO's phase diagram. Conventionally, to establish Ni 3 þ dominant phase in SNO, either extreme high O 2 pressure (above 100 bars) at intermediate temperature or epitaxial strain (induced by the lattice mismatch between substrates and SNO) is necessary 3,4 . The thermodynamic properties of Ni 3 þ and Ni 2 þ makes it feasible to induce phase transitions through electron doping near room temperature.…”

Section: Articlementioning

confidence: 99%

“…The monotonic shift of carrier transport and magnetic properties with various 4f rare earth lanthanide elements correlated with the steric effect makes RNiO 3 an excellent platform in revealing the underlying correlated physics 2 . Conductance modulation in nickelates such as SmNiO 3 (SNO) as a result of the thermally driven insulator-metal transition is usually within one-two orders of magnitude right across the transition boundary 1,3,4 , which may originate from the subtle charge disproportionation (for simplicity, 2Ni 3 þ -Ni ( (refs 5-7). Spectroscopic characterizations reveal that the ground state of RNiO 3 has a strong covalency, described as C G covalent ¼ a 3d 7 2p 6 þ b 3d 8 L in its insulating state 8,9 .…”

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confidence: 99%

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Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping

2014

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The electronic properties of correlated oxides are exceptionally sensitive to the orbital occupancy of electrons. Here we report an electron doping strategy via a chemical route, where interstitial dopants (for example, hydrogen) can be reversibly intercalated, realizing a sharp phase transition in a model correlated perovskite nickelate SmNiO 3 . The electron configuration of e g orbital of Ni 3 þ t 6 2g e 1 g in SmNiO 3 is modified by injecting and anchoring an extra electron, forming a strongly correlated Ni 2 þ t 6 2g e 2 g structure leading to the emergence of a new insulating phase. A reversible resistivity modulation greater than eight orders of magnitude is demonstrated at room temperature. A solid-state room temperature nonvolatile proton-gated phase-change transistor is demonstrated based on this principle, which may inform new materials design for correlated oxide devices. Electron doping-driven phase transition accompanied by large conductance changes and band gap modulation opens up new directions to explore emerging electronic and photonic devices with correlated oxide systems.

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Section: Articlementioning

confidence: 99%

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confidence: 99%

Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping

2014

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“…[21][22][23][24][25] While thin films probably suffer from higher point defect concentration, bulk sintered ceramic samples suffer from a high density of grain boundaries. As noted in Ref.…”

Section: Introductionmentioning

confidence: 99%

Hall effect measurements on epitaxial SmNiO3thin films and implications for antiferromagnetism

Jaramillo

Silevitch

et al. 2013

Phys. Rev. B

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The rare-earth nickelates (RNiO 3 ) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (½, 0, ½) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (R H ) of epitaxial SmNiO 3 thin films with varying oxygen stoichiometry. We find that from room temperature through the high temperature insulator-metal transition, the Hall coefficient is hole-like and the Seebeck coefficient is electron-like. At low temperature the Néel transition induces a crossover in the sign of R H to electron-like, similar to the effects of spin density wave formation in metallic systems but here arising in an insulating phase ~200 K below the insulator-metal transition. We propose that antiferromagnetism can be stabilized by bandstructure even in insulating phases of correlated oxides, such as RNiO 3 , that fall between the limits of strong and weak electron correlation.3

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“…The calculated transition temperature of the SN and NSN films were 124.0 and 32.5 °C, and the value of SN was close to the reported value, and the value of NSN was slightly higher than the reported value . The radiative emissivity value of SmNiO 3 varies from the low temperature phase of 0.75 to the high temperature phase of 0.57, and the transition temperature can be also evaluated utilizing this property (Ha et al, 2012). Figure 4 presents the temperatures measured by a thermocouple (recorded on the abscissa axis) and a radiation thermometer (recorded on the vertical axis), and the radiative emissivity value of the detector was fixed "1" at all the temperature range.…”

Section: Resultsmentioning

confidence: 99%

Deposition of Transition Temperature Controlled Thermochromic NdxSm1-xNiO3 Films by Spin Coating

Miyazaki¹,

Maejima²,

Makinose³

2017

JMSR

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The precursor samarium nickelate or samarium-neodimium nickelate films were fabricated by a spin coating method using Sm-Ni or Nd-Sm-Ni aqueous solutions, and SmNiO 3 and Nd 0.5 Sm 0.5 NiO 3 films were obtained by heat-treatment of the precursor films at 750 °C in oxygen atmosphere. The resulting SmNiO 3 and Nd 0.5 Sm 0.5 NiO 3 films showed an electrical transition with the transition temperatures of 124.0 and 32.5 °C, respectively. Both of the films showed optical thermochromic properties at the above mentioned transition temperatures.

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Stable metal–insulator transition in epitaxial SmNiO3 thin films

Cited by 44 publications

References 18 publications

Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping

Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping

Hall effect measurements on epitaxial SmNiO3thin films and implications for antiferromagnetism

Deposition of Transition Temperature Controlled Thermochromic NdxSm1-xNiO3 Films by Spin Coating

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