Stable Electrical Operation of 6H–SiC JFETs and ICs for Thousands of Hours at 500 $^{\circ}\hbox{C}$

Fully-monolithic, 600°C differential amplifiers in 6H-SiC JFET IC technology

“…On the other hand, the simple SiC JFET amplifier reported in [4] has a very stable voltage gain (less than 1% change) of ~3 after 3007 hours of operation at 500 o C. In this work, a family of fully differential JFET IC amplifiers that provide voltage gains up to 69 dB at 576°C is reported.…”

“…The gate capacitance of the source follower (C GD4,5 and C GS4,5 ) serves as the capacitive load to the first stage. C GS4,5 is mostly cancelled by the Miller effect, since the gain of the source follower is approximately unity, and the zero caused by the gatecapacitance feed-through, 4 and high load capacitance C L .…”

Effects of annealing temperature on the structure and electrical properties of tungsten contacts to n-type silicon carbide

“…Silicon carbide is an object of great interest in the prospective of its application as a material for production of thermally resistant, high power electronic devices capable of operating at a temperature as high as 600 • C [1,2]. Moreover, SiC is characterized by high electron mobility and large saturated drift velocity, which makes it an appropriate material for the production of high frequency semiconductor devices [3,4].…”

Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

“…Therefore, substantial challenges remain to be overcome before SiC contacts are ready to support prolonged (tens of years) operation in air or in different atmospheres (Nitrogen, vacuum), at ambient temperature up to 600 • C [7,8], so the main objective of this paper is to propose original contacts that can respond to this broad range of requirements.…”