Stable CdTe thin film solar cells with a MoO<sub>x</sub> back‐contact buffer layer

Yang, Ruilong; Wang, Dezhao; Jeng, Ming–Jer; Ho, Kai-Ming; Wang, DeLiang

doi:10.1002/pip.2645

Cited by 36 publications

(10 citation statements)

References 25 publications

(43 reference statements)

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“…13,14 Cu i + was suggested to be mobile at room temperature, and this is consistent with the cell stressing tests carried out at room temperature in our laboratory. [12][13][14][15] It was reported that Cu doping of CdTe absorber layer could lead to Cu diffusion to the CdTe/CdS interface. 16 In a solar cell structure, accumulation of Cu near the CdS/CdTe junction interface would have profound influence on the cell performance.…”

Section: Introductionmentioning

confidence: 99%

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Cu-doped CdS and its application in CdTe thin film solar cell

Deng

Yang

et al. 2016

AIP Advances

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Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

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Section: Introductionmentioning

confidence: 99%

“…6,11 However, Cu is easy to diffuse from the back contact into the CdTe absorber layer and even into the CdS window layer. 12 Cu in CdTe can exist as an interstitial as Cu i + , which is a shallow donor. Cu can also substitute Cd or occupy a Cd vacancy to form a deep acceptor state Cu Cd .…”

Section: Introductionmentioning

confidence: 99%

Cu-doped CdS and its application in CdTe thin film solar cell

Deng

Yang

et al. 2016

AIP Advances

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“…to increase the efficiency of the photovoltaic cell. [ 21–24 ] Table 1 depicts the comparison of photovoltaic performance of different HTL with proposed design. Table 1 clearly indicates that the proposed design has the least lattice mismatch (%) when compared to alternative HTL CdTe structures.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Singh

Agarwal

Kanumuri

2021

Physica Status Solidi (a)

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This article discusses the numerical analysis of heterojunction photovoltaic cells based on cadmium telluride (CdTe) using the SCAPS‐1D software. A novel glass/FTO/SnO2/CdS/interdiffusion/CdTe/SnS2/Se photovoltaic cell design is proposed for investigation. Additionally, the effect of thickness variation in the p‐type CdTe film, thickness variation in the interdiffusion layer, defect density in the CdTe film, defect density in the interdiffusion layer, and acceptor concentration in the CdTe layer is studied in order to improve the photovoltaic cell's efficiency. The study determines an optimal thickness of 1 and 0.6 μm for the CdTe and interdiffusion layers, respectively, a defect density of 1 × 1014 cm−3 for the CdTe film and interdiffusion region, an interface defect density of 1 × 1010 cm−3 between CdTe/interdiffusion, SnS2/CdTe, and CdS/interdiffusion, and an acceptor concentration value of 8.5 × 1015 cm−3. The optimized CdTe photovoltaic cell structure with current density (Jsc) = 30.003 mA cm−2, open‐circuit voltage (Voc) = 1.061 V, and fill factor (FF) = 88.10% achieves a 28.07% efficiency, compared to the baseline CdTe photovoltaic cell structure with a 23.01% efficiency.

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“…[15][16][17] Commonly used metal thin lms, such as Ag, Al, and etc., own lower work function than that of CdTe, and could not directly match with CdTe layer to construct a good ohmic contact. To solve this problem, various materials with high work functions are used as the back contact, such as MoO 3 , 18,19 Sb 2 Te 3 , 20,21 17 HgTe, 16 etc. Our group has devoted a lot of efforts to searching for new back contact materials.…”

Section: Introductionmentioning

confidence: 99%