2018
DOI: 10.1021/acsami.7b16416
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Stable and Reversible Lithium Storage with High Pseudocapacitance in GaN Nanowires

Abstract: In this work, gallium nitride (GaN) nanowires (NWs) were synthesized by chemical vapor deposition (CVD) process. The hybrid electrode showed the capacity up to 486 mAh g after 400 cycles at 0.1 A g. Even at 10 A g, the reversible capacity can stabilize at 75 mAh g (after 1000 cycles). Pseudocapacitive capacity was defined by kinetics analysis. The dynamics analysis and electrochemical reaction mechanism of GaN with Li was also analyzed by ex situ XRD, HRTEM, and XPS results. These results not only cast new lig… Show more

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Cited by 56 publications
(27 citation statements)
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References 49 publications
(74 reference statements)
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“…As shown in Figure b, the diffraction peaks of each crystal facet are extremely sharp and strong; thus indicating that the GaN crystal has high purity and crystallinity. The characteristic peaks of the GaN wafer in both the Ga polarity facet and N polarity facet appear only 34.34° for (002) and 72.71° (004), with no other crystal diffraction peaks noted . Hence, the GaN crystals have an excellent crystalline quality.…”
Section: Resultsmentioning
confidence: 94%
See 1 more Smart Citation
“…As shown in Figure b, the diffraction peaks of each crystal facet are extremely sharp and strong; thus indicating that the GaN crystal has high purity and crystallinity. The characteristic peaks of the GaN wafer in both the Ga polarity facet and N polarity facet appear only 34.34° for (002) and 72.71° (004), with no other crystal diffraction peaks noted . Hence, the GaN crystals have an excellent crystalline quality.…”
Section: Resultsmentioning
confidence: 94%
“…The characteristic peaks of the GaN wafer in both the Ga polarity facet and Np olarity facet appear only 34.348 for (002) and7 2.718 (004), with no other crystal diffraction peaks noted. [36,37] Hence, the GaN crystals have an excellent crystalline quality.F urthermore, ah ighly operable and precise processing of crystals can accurately obtain an onpolar facet. However, a1 3.6 %l attice mismatch is found between the sapphire substrate and GaN crystal,t hereby resulting in expansion of the GaN monocrystallinel attice.…”
Section: Resultsmentioning
confidence: 99%
“…Sun et al reported the preparation of gallium nitride nanowires (GaN NWs) on graphite substrate by a chemical vapor deposition (CVD) method, showing in Fig. 8(c) [153]. Electrical testing based on single GaN NW showed a conductivity of 1.54 Â 10 3 S m À1 , which was comparable with graphite layer (7.5 Â 10 4 S m À1 ).…”
Section: Gallium Nitride Anodesmentioning
confidence: 99%
“…Thus, it is extremely urgent to explore cost-effective cathodes with readily available materials. For example, metal fluorides [5][6][7][8], oxides [9,10], sulfides [11] and nitrides [12] have been explored for LIBs.…”
Section: Introductionmentioning
confidence: 99%