Stabilizing n-type hetero-junctions for NiO<sub>x</sub> based inverted planar perovskite solar cells with an efficiency of 21.6%

Chen, Wei; Pang, Guotao; Zhou, Yecheng; Sun, Yannan; Liu, Fang‐Zhou; Chen, Rui; Chen, Shuming; Djurišić, Aleksandra B.; He, Zhaojian

doi:10.1039/c9ta12368g

Cited by 44 publications

(38 citation statements)

References 58 publications

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“…The Cl‐ion doping is beneficial by passivating defects in the perovskite due to stronger bonding between Pb and Cl compared to Pb and I. [ 37,42 ] The UV–vis absorption spectra in Figure 3b also show that the absorption intensity has increased gradually to a certain extent with the incorporation of the NSs, but the calculated band gaps for these three perovskite films have not changed significantly (inset in Figure 3b and Figure S10, Supporting Information). Therefore, the doped Cl ions have little influence on the band gap of the perovskite.…”

Section: Resultsmentioning

confidence: 99%

2D Cs₂PbI₂Cl₂ Nanosheets for Holistic Passivation of Inorganic CsPbI₂Br Perovskite Solar Cells for Improved Efficiency and Stability

Yang

Liu

Han

et al. 2020

Advanced Energy Materials

118

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them, CsPbI 2 Br possesses a high stability for preparing in air [3,4] and a suitable bandgap for solar-spectrum absorption, [5,6] so it is considered to be an excellent candidate for fabricating efficient all-inorganic perovskite solar cells (PSCs). However, the black-phase CsPbI 2 Br (cubic α-phase) is unstable under ambient conditions and tends to convert into the most stable nonperovskite δ-CsPbI 2 Br phase, which poses a major hurdle in the path toward commercial viability. Furthermore, despite the rapid development of the CsPbI 2 Br PSCs, their efficiencies achieved to date are still unsatisfactory, leaving much room for further improvement. [7] Recent research shows that the interface state in a PSC is the main factor affecting the stability and performance of the device. [8-11] Therefore, in order to enhance the efficiency and stability of inorganic PSCs, engineering of the different interfaces (such as the electron transport layer (ETL)/CsPbX 3 interface, hole transport layer (HTL)/CsPbX 3 interface) is essential and has been developed in separate works. [12-16] Inorganic perovskite nanocrystals (NCs) consisting of abundant elements and possessing tunable energy levels, excellent crystallinity, and high stability are very attractive for both elemental doping and interface engineering in the inorganic CsPbX 3 PSCs. [17] For example, inorganic CsPbI 3 NCs have been used

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Section: Resultsmentioning

confidence: 99%

2D Cs₂PbI₂Cl₂ Nanosheets for Holistic Passivation of Inorganic CsPbI₂Br Perovskite Solar Cells for Improved Efficiency and Stability

Yang

Liu

Han

et al. 2020

Advanced Energy Materials

118

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“…Basing on those obtained surface potentials, a schematic energy level diagram of devices is figured out in Figure 4f according to the band alignment rule in previous reports. [ 49,58 ] E F(P) in our device is around ‐4.89 eV, cited from our previous paper. [ 59 ] E F(N) can be determined by the work function of the Kelvin probe along with the surface potentials detected above, which are shown in Figure 4f for v‐ETL and s‐ETL, respectively.…”

Section: Figurementioning

confidence: 84%

Sputtered Indium‐Zinc Oxide for Buffer Layer Free Semitransparent Perovskite Photovoltaic Devices in Perovskite/Silicon 4T‐Tandem Solar Cells

Ying

Zhu

Feng

et al. 2020

Adv Materials Inter

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processes with big cost-down potential, which results in a cutting-edge conversion efficiency record of 25.2%. [3] In the device structure of semitransparent PSCs, the superstrate is mostly made of widely used indium-tin oxide (ITO) coated glass, which is called Front-transparent-electrode (FTE) and allows high light transmission and high conductivity. The ITO glass can be purchased directly or produced by depositing ITO films on glass substrates. [4] Compared with ITO based FTEs, rear transparent electrodes (RTE) deposited on the sensitive absorber layer need gentle film deposition because the high deposition temperature of ITO series would damage the underlying active layers in the device. [5-7] To date, various materials combinations were applied to realize effective RTE, [8-10] whereas metal contained RTEs suffer from either high interfacial recombination, low conductivity, or inferior near-infrared T%. [11-13] Neighboring ITO, Indium-zinc oxide (IZO) owns high mobility and low Urbach energy, especially room temperature for deposition, [14-16] which meet the abovementioned requirement of RTE. To date, IZO has been successfully adopted as RTE in PSCs for tandem devices. [17-28] Most of them were deposited by the sputtering process. However, the energetic bombardment in the sputtering process would damage the surface of the underlying carrier transport layer (CTL), and hence increase dangling bonds and trap density, resulting in interfacial recombinations in the device and finally deteriorate the device performance. [29] Among them, the introduction of buffer layer, including MoO x , [30-32] SnO x , [33-36] ZnO x , [37-40] and so on, [41-43] at the interface between IZO and CTL seems a reluctant choice to prevent the underlying CTL from the damage in the IZO deposition process. Undoubtedly, the additional buffer layer definitely increases the series resistance, resulting in some parasitic absorption and interfacial recombinations, which would deteriorate the device performance. [44-46] Meanwhile, the deposition of the buffer layer would also complicate the manufacturing process and increase the operation cost. Thereby, it is necessary to develop the direct contact of IZO/CTL without the buffer layer, as well as its corresponding fabrication process.

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“…successfully synthesized the Cd x Zn 1−x Se y S 1−y alloyed QDs for passivating as well as stabilizing the perovskite/electronic transport layer of n‐type heterojunction in NiO x HTL based inverted planar PVSCs. [ 204 ] The QDs have been used as interface modification layer for passivate defects and stabilize the interface between perovskite and C 60 rather than charge transport layer. These results can be indicated that the defects/traps (unsaturated Pb 2± and mobile iodine ions) at perovskite surfaces were substantially suppressed by e QDs which led to significant reduction in interfacial recombination and more stable n‐type heterojunction which confirmed from both experimental and theoretical results.…”

Section: Mixed Cation Halide Pvscsmentioning

confidence: 99%

Inorganic hole transport layers in inverted perovskite solar cells: A review

et al. 2021

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In the past decades, the inverted structure (p‐i‐n structure) perovskite solar cells (PVSCs) have been attracted more by the researchers owing to their ease of fabrication, cost‐effectiveness, lower processing temperature for the fabrication of large scale and flexible devices with negligible J−V hysteresis effects. The hole transporting layer (HTL) as a major served content of PVSCs has significant influence on light harvesting, carrier extraction and transportation, perovskite crystallization, stability and cost. Generally, the organic materials are used as HTLs which have less stability due to their morphology under thermal conditions; thus, leads to change in properties of them. A tantalizing possibility is replacement of p‐type inorganic materials instead of organic materials but the plenty of options are available for inorganic HTLs. However, the development of more variants for inorganic HTL is a major challenge. Till date, many materials have been reported, but their performances have not superseded that of their organic counterparts. Herein, the review on various inorganic HTLs based inverted PVSCs has been reported and analyzed their performances with appropriate properties such as proper energy level and high carrier mobility which are not only assisted with charge transport, but also improved the stability of PVSCs under ambient conditions.

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Stabilizing n-type hetero-junctions for NiO_x based inverted planar perovskite solar cells with an efficiency of 21.6%

Abstract: We demonstrate a substantial suppression of interfacial trap states in inverted PSCs via CdZnSeS QDs, leading to a large efficiency improvement.

Cited by 44 publications

References 58 publications

2D Cs₂PbI₂Cl₂ Nanosheets for Holistic Passivation of Inorganic CsPbI₂Br Perovskite Solar Cells for Improved Efficiency and Stability

2D Cs₂PbI₂Cl₂ Nanosheets for Holistic Passivation of Inorganic CsPbI₂Br Perovskite Solar Cells for Improved Efficiency and Stability

Sputtered Indium‐Zinc Oxide for Buffer Layer Free Semitransparent Perovskite Photovoltaic Devices in Perovskite/Silicon 4T‐Tandem Solar Cells

Inorganic hole transport layers in inverted perovskite solar cells: A review

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Stabilizing n-type hetero-junctions for NiOx based inverted planar perovskite solar cells with an efficiency of 21.6%

Abstract: We demonstrate a substantial suppression of interfacial trap states in inverted PSCs via CdZnSeS QDs, leading to a large efficiency improvement.

Cited by 44 publications

References 58 publications

2D Cs2PbI2Cl2 Nanosheets for Holistic Passivation of Inorganic CsPbI2Br Perovskite Solar Cells for Improved Efficiency and Stability

2D Cs2PbI2Cl2 Nanosheets for Holistic Passivation of Inorganic CsPbI2Br Perovskite Solar Cells for Improved Efficiency and Stability

Sputtered Indium‐Zinc Oxide for Buffer Layer Free Semitransparent Perovskite Photovoltaic Devices in Perovskite/Silicon 4T‐Tandem Solar Cells

Inorganic hole transport layers in inverted perovskite solar cells: A review

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Stabilizing n-type hetero-junctions for NiO_x based inverted planar perovskite solar cells with an efficiency of 21.6%

2D Cs₂PbI₂Cl₂ Nanosheets for Holistic Passivation of Inorganic CsPbI₂Br Perovskite Solar Cells for Improved Efficiency and Stability

2D Cs₂PbI₂Cl₂ Nanosheets for Holistic Passivation of Inorganic CsPbI₂Br Perovskite Solar Cells for Improved Efficiency and Stability