2011
DOI: 10.1116/1.3565428
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Stabilized electron emission from silicon coated carbon nanotubes for a high-performance electron source

Abstract: The authors show that carbon nanotubes ͑CNTs͒ coated with an amorphous silicon layer around their periphery show enhanced and stable electron emission. The CNT-field emitter array was grown on silicon substrate through a resist-assisted patterning process. The CNTs become coated with silicon from the substrate, which is etched and redeposited onto the CNTs. The authors obtained enhanced and stabilized electron emission from the silicon coated CNTs with a turn-on field of 2 V/ m at an emission current density o… Show more

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Cited by 23 publications
(10 citation statements)
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References 14 publications
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“…The tip apex measured a few nanometers in diameter, and the diameter of the bottom region in contact with the substrate was equal to the pre-patterned dot area of the 3 µm island. The adhesion of conventional single CNTs onto the substrate is weak [ 12 ]. This is thought to increase the adhesion between the CNTs and the substrate, also to reduce the screening effect between emitters and adjacent emitter [ 13 ].…”
Section: Resultsmentioning
confidence: 99%
“…The tip apex measured a few nanometers in diameter, and the diameter of the bottom region in contact with the substrate was equal to the pre-patterned dot area of the 3 µm island. The adhesion of conventional single CNTs onto the substrate is weak [ 12 ]. This is thought to increase the adhesion between the CNTs and the substrate, also to reduce the screening effect between emitters and adjacent emitter [ 13 ].…”
Section: Resultsmentioning
confidence: 99%
“…They were grown by direct current plasma-enhanced chemical vapor deposition for 60 min. The growth temperature was 630 °C, the voltage of graphite susceptor (cathode) was −620 V, and the mesh voltage was + 320 V. Acetylene (C 2 H 2 ) and ammonia (NH 3 ) gas were fed at rates of 20 sccm and 160 sccm, respectively, during the growth time [33,34]. After the growth, 1000 °C annealing was performed for 1 h in an argon gas atmosphere of 130 mTorr.…”
Section: Methodsmentioning
confidence: 99%
“…The CNTs were grown using a DC-PECVD explained in detail elsewhere [ 19 ]. For the PECVD process, rectangular rounded metal substrates with an area of 0.1377 cm 2 and width of 1.5 mm, were used to grow the CNTs as in Figure 1 a placed on a graphite susceptor.…”
Section: Methodsmentioning
confidence: 99%