Stabilization of YMnO<sub>3</sub> in a Perovskite Structure as a Thin Film

Salvador, Paul A.; Doan, Trong-Duc; Mercey, B.; Raveau, B.

doi:10.1021/cm9802797

Cited by 112 publications

(93 citation statements)

References 32 publications

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“…The bulk YMnO 3 is FE with the Curie temperature T CE = 570-990 K and AFM with the Néel temperature T N = 70-130 K [67]. It was shown that the strained hexagonal YMnO 3 can be stabilized in orthorhombic perovskite phase, which is an excellent example for strain engineering [68]. Strain has been found to be crucial in stabilizing other RMnO 3 in the FE hexagonal form [18].…”

Section: (D) Thin Filmsmentioning

confidence: 99%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

204

144

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The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.

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Section: (D) Thin Filmsmentioning

confidence: 99%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

204

144

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Section: Introductionmentioning

confidence: 99%

“…This phase can be also stabilized in YMO thin films under compressive epitaxial stress. [8][9][10] Whereas the phase stabilization is documented in these references, the physical properties of orthorhombic YMO films are not reported.We report here on the growth and magnetic characterization of AF perosvkite YMO thin films. Epitaxial films were deposited on SrTiO 3 ͑STO͒ substrates having different orientations; we will show that this strategy allows selection of the YMO crystal out-of-plane orientation.…”

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confidence: 99%

Exchange bias between magnetoelectric YMnO3 and ferromagnetic SrRuO3 epitaxial films

Martí

Sánchez

Fontcuberta

et al. 2006

Journal of Applied Physics

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Orthorhombic YMnO 3 ͑YMO͒ epitaxial thin films were deposited on SrTiO 3 ͑STO͒ single-crystal substrates. We show that the out-of-plane texture of the YMO films can be tailored using STO substrates having ͑001͒, ͑110͒, or ͑111͒ orientations. We report on the magnetic properties of the YMO͑010͒ films grown on STO͑001͒ substrates. The dependence of the susceptibility on the temperature indicates that the films are antiferromagnetic below the Néel temperature ͑around 35 K͒. Orthorhombic YMO͑010͒ films were also deposited on an epitaxial buffer layer of ferromagnetic and metallic SrRuO 3 ͑SRO͒. The magnetic hysteresis loops of SRO show exchange bias at temperatures below the Néel temperature of YMO. These results confirm that the YMO films are antiferromagnetic and demonstrate that magnetoelectric YMO can be integrated in functional epitaxial architectures. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2167333͔ INTRODUCTIONMultifunctional materials research is of fundamental importance for the next generation of devices of relevance in several areas of science and technology, including magnetoelectronics. Biferroic materials show the coexistence of ferroelectricity and magnetic order and are currently receiving much attention ͑see two recent reviews in Refs. 1 and 2͒. One of the most studied materials is the hexagonal phase of YMnO 3 ͑YMO͒, which is ferroelectric and antiferromagnetic ͑AF͒. 3 The orthorhombic phase of YMO is not ferroelectric, but substantial changes of the dielectric constant close to the AF order temperature have been reported. 4 The orthorhombic phase of YMO is metastable in bulk, and it forms only when high pressures are applied 4 or by soft chemistry techniques. 5,6 YMO belongs to the family of RMnO 3 compounds, where R is a trivalent cation. These compounds can present either hexagonal or orthorhombic structure, depending on the size of the R 3+ cation. 7 Specific volume is lower in the perovskite ͑orthorhombic͒ phase than in the hexagonal, and the orthorhombic phase can be stabilized in bulk samples under high pressures. This phase can be also stabilized in YMO thin films under compressive epitaxial stress. [8][9][10] Whereas the phase stabilization is documented in these references, the physical properties of orthorhombic YMO films are not reported.We report here on the growth and magnetic characterization of AF perosvkite YMO thin films. Epitaxial films were deposited on SrTiO 3 ͑STO͒ substrates having different orientations; we will show that this strategy allows selection of the YMO crystal out-of-plane orientation. This is of fundamental importance towards device design since it makes possible having films with precisely controlled magnetic, ferroelectric, or magnetoelectric axis orientation. We present magnetic measurements of the films grown on STO͑001͒, confirming their AF character below the Néel temperature, T N ϳ 35 K. Moreover, we report also on the growth and magnetic characterization of bilayers with YMO and SrRuO 3 ͑SRO͒, a ferromagnetic and metallic oxide below ϳ150 K....

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“…For example, doping (Ba,Ca)TiO 3 FE ceramics and the incipient FE SrTiO 3 with tin resulted in the enhancement [28][29][30][31] Modern epitaxial engineering techniques can stabilize metastable structures through artificial elastic boundary conditions (misfit strain) and/or rate-limited kinetics. 38 Therefore, they offer an alternative approach to avoid the restrictions imposed by bulk thermodynamics in order to grow novel materials with enhanced properties that have the potential to replace PZT in a variety of technological applications. A recent attempt to synthesize SnTiO 3 films on sapphire and perovskite substrates from ceramic SnO 2 and TiO 2 targets utilizing PLD produced nonpolar ilmenite-type structures with only traces of a second phase compatible with perovskite geometry.…”

Section: Introductionmentioning

confidence: 99%

First-principles studies of lone-pair-induced distortions in epitaxial phases of perovskiteSnTiO3andPbTiO3

et al. 2015

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In this project, a computational investigation utilizing density functional theory methods is carried out to elucidate the differences in stereochemical lone-pair activity of Pb 2+ and Sn 2+ A-site ions in epitaxial polar ATiO3 perovskites. The contrasting tendencies for the lead-and tin-based compounds to form different phases -Amm2 for the former vs Cm for the latter -under biaxial tension are connected to the amount of charge concentrated within the lone pair lobes. Specifically, phases are energetically more preferable when as much charge as possible is dissipated out of the lobe, thus lowering the cost of Coulomb repulsions between the lone pair and the surrounding oxygen cage. Although a strong band gap tuning was predicted in (fictitious) SnTiO3 during the tensile P 4mm → Cm phase transformation [see Phys. Rev. B 84, 245126 (2011)], we find the same effect to be considerably weaker in PbTiO3. The insights gained about the electronic-level underpinnings of transitional behavior in such lone-pair active epitaxial ferroelectrics may be used in the design of a new generation of more efficient electromechanical and electrooptical devices.

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Stabilization of YMnO₃ in a Perovskite Structure as a Thin Film

Cited by 112 publications

References 32 publications

Multi-ferroic and magnetoelectric materials and interfaces

Multi-ferroic and magnetoelectric materials and interfaces

Exchange bias between magnetoelectric YMnO3 and ferromagnetic SrRuO3 epitaxial films

First-principles studies of lone-pair-induced distortions in epitaxial phases of perovskiteSnTiO3andPbTiO3

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Stabilization of YMnO3 in a Perovskite Structure as a Thin Film

Cited by 112 publications

References 32 publications

Multi-ferroic and magnetoelectric materials and interfaces

Multi-ferroic and magnetoelectric materials and interfaces

Exchange bias between magnetoelectric YMnO3 and ferromagnetic SrRuO3 epitaxial films

First-principles studies of lone-pair-induced distortions in epitaxial phases of perovskiteSnTiO3andPbTiO3

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Stabilization of YMnO₃ in a Perovskite Structure as a Thin Film