Stabilization of the Morphology and Crystal Phase in Ensembles of Self‐Catalyzed GaAs Nanowires

Dubrovskiı̆, V. G.

doi:10.1002/pssr.201900301

Cited by 5 publications

(4 citation statements)

References 28 publications

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“…A similar observation was reported in [20]. Indeed, due to radius stabilization [22], all NWs can be expected to approach the same diameter over time regardless of starting diameter. On the other hand, the base diameter (solid lines in figure 3) was usually larger than the top diameter (dashed lines), indicating a slightly positive-tapered NW morphology as evident in figure 1.…”

Section: Effect Of Ga Pre-deposition On Morphologysupporting

confidence: 83%

Improving the yield of GaAs nanowires on silicon by Ga pre-deposition

2021

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GaAs nanowire (NW) arrays were grown by molecular beam epitaxy using the self-assisted vapor−liquid−solid method with Ga droplets as seed particles. A Ga pre-deposition step is examined to control NW yield and diameter. The NW yield can be increased with suitable duration of a Ga pre-deposition step but is highly dependent on oxide hole diameter and surface conditions. The NW diameter was determined by vapor-solid growth on the NW sidewalls, rather than Ga pre-deposition. The maximum NW yield with a Ga pre-deposition step was very close to 100%, established at shorter Ga deposition durations and for larger holes. This trend was explained within a model where maximum yield is obtained when the Ga droplet volume approximately equals the hole volume.

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Section: Effect Of Ga Pre-deposition On Morphologysupporting

confidence: 83%

Improving the yield of GaAs nanowires on silicon by Ga pre-deposition

2021

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“…where we use the result of integration of Equation (1) for R in the denominator. Here, the first bracket term stands for the droplet shape evolution in the VLS process, similar to [42], while the second describes the decrease of the contact angle by In-limited VS radial growth on the NW sidewalls. The stationary contact angle β c is obtained from:…”

Section: Resultsmentioning

confidence: 99%

Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory

et al. 2020

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The growth mechanisms of self-catalyzed InAs/InSb axial nanowire heterostructures are thoroughly investigated as a function of the In and Sb line pressures and growth time. Some interesting phenomena are observed and analyzed. In particular, the presence of In droplet on top of InSb segment is shown to be essential for forming axial heterostructures in the self-catalyzed vapor-liquid-solid mode. Axial versus radial growth rates of InSb segment are investigated under different growth conditions and described within a dedicated model containing no free parameters. It is shown that widening of InSb segment with respect to InAs stem is controlled by the vapor-solid growth on the nanowire sidewalls rather than by the droplet swelling. The In droplet can even shrink smaller than the nanowire facet under Sb-rich conditions. These results shed more light on the growth mechanisms of self-catalyzed heterostructures and give clear route for engineering the morphology of InAs/InSb axial nanowire heterostructures for different applications.

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“…It will be compared to the theoretically model predicted in ref. 44 and experimentally shown at a single NW in an environmental TEM in ref. 20.…”

Section: Methodsmentioning

confidence: 91%

Correlating in situ RHEED and XRD to study growth dynamics of polytypism in nanowires

et al. 2021

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Stabilization of the Morphology and Crystal Phase in Ensembles of Self‐Catalyzed GaAs Nanowires

Cited by 5 publications

References 28 publications

Improving the yield of GaAs nanowires on silicon by Ga pre-deposition

Improving the yield of GaAs nanowires on silicon by Ga pre-deposition

Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory

Correlating in situ RHEED and XRD to study growth dynamics of polytypism in nanowires

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