2014
DOI: 10.1016/j.ssi.2013.12.027
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Stabilization of the delta-phase in Bi 2 O 3 thin films

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Cited by 38 publications
(18 citation statements)
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“…obtained from XRD measurements are given in Table I and they are in the range 5.5400-5.4862 Å. These results are in a good agreement with the results obtained from similar studies in literature [7,24,25].…”
Section: Xrd Measurement Resultssupporting
confidence: 90%
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“…obtained from XRD measurements are given in Table I and they are in the range 5.5400-5.4862 Å. These results are in a good agreement with the results obtained from similar studies in literature [7,24,25].…”
Section: Xrd Measurement Resultssupporting
confidence: 90%
“…In recent years, fuel cells are attracting tremendous interest because of their direct conversion ability of the electrochemical energy stored in fuel into electrical energy, low system cost, very low pollutants, and great potential for power-generation to meet the demand of various applications with high efficiency. There are many types of the fuel cells and they are, generally, classified according to the electrolyte types used [1], such as phosphoric acid fuel cell (PAFC), proton exchange membrane (PEM) fuel cell, molten carbonate fuel cell (MCFC), direct methanol fuel cell (DMFC), alkaline fuel cell (AFC) and solid oxide fuel cell (SOFC) [2][3][4][5][6] in which solid oxide ceramic electrolytes are used [7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…10 −1 S cm −1 at 400°C. Such high values of conductivity are often measured in bismuth oxides based compounds, although they often appear rather unconsistent in the literature [27][28][29]. Interestingly, no change in conductivity is observed at T=700°C, as expected by the α− to δ−phase transition of Bi 2 O 3 (dashed line figure 2 top).…”
Section: Resultsmentioning
confidence: 74%
“…It had been earlier also used for the smoke detection [32]. The most widely used method for stabilization of α-Bi 2 O 3 (in term to get the defect structure of fluorite-type and high ionic conductivity at low temperature range) consists of doping with Mo, Y, V, Cu, Nb and Er atoms [33,34]. The aim of this research was to produce and characterize the Mo-doped Bi 2 O 3 thin films deposited by PLD technique on the monocrystalline Si substrate.…”
Section: Pld Deposition Of the Bismuth Oxidementioning
confidence: 99%