1972
DOI: 10.1080/00150197208235755
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Stabilization effects in piezoelectric lead titanate zirconate ceramics

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Cited by 83 publications
(43 citation statements)
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“…The resulting asymmetric charge distribution then leads to the formation of an internal bias field. [9][10][11][12] In contrast, the "defect dipole model" is based on the formation of defect dipoles within the unit cell, consisting of the acceptor ion and a bound oxygen vacancy. 4,13,14 The defect dipole model was first described by Arlt and Neumann in BT, where Ti 4þ on the B-site is replaced by Ni 2þ .…”
Section: Piezoelectric Ceramics Introductionmentioning
confidence: 99%
“…The resulting asymmetric charge distribution then leads to the formation of an internal bias field. [9][10][11][12] In contrast, the "defect dipole model" is based on the formation of defect dipoles within the unit cell, consisting of the acceptor ion and a bound oxygen vacancy. 4,13,14 The defect dipole model was first described by Arlt and Neumann in BT, where Ti 4þ on the B-site is replaced by Ni 2þ .…”
Section: Piezoelectric Ceramics Introductionmentioning
confidence: 99%
“…25 Because even a slight redistribution of charge carriers is sufficient to compensate these depolarizing fields, 29 the charges accumulating at domain walls will effectively hinder domain wall motion. 27,28 Donor doping and acceptor doping obviously have a profound effect on domain stability in systems like PZT. Still, their effect on BNT-based lead-free materials has not been systematically studied in detail, though there are a couple of reports for the effect of defect-generating dopants on depolarization temperature T d .…”
Section: Introductionmentioning
confidence: 99%
“…Acceptor doping generally increases the number of free charge carriers present. The charge carriers are redistributed during aging; the driving force is generally a͒ considered to be related to depolarization fields at domain walls, at grain boundaries, [26][27][28] inside the grains, 15 or at the sample surface. 25 Because even a slight redistribution of charge carriers is sufficient to compensate these depolarizing fields, 29 the charges accumulating at domain walls will effectively hinder domain wall motion.…”
Section: Introductionmentioning
confidence: 99%
“…In this second group, the transition ions with multiple valency (especially those of Mn) promote fixation of the domain configuration and are called ''stabilizers'' (4,5,10,11). These substitutions result in ''hard materials'' with low losses (tg :0.4%) and are mainly used as power transducers.…”
Section: Present State Of the Pzt Compositionsmentioning
confidence: 98%
“…-formula [3] with charged vacancies, -formula [4] with neutral vacancies. In formula [2], it is seen that some A sites act as ''electron acceptors'' and some B sites act as ''electron donors.…”
Section: Chemical Formulation Of Pzt Type Ceramicsmentioning
confidence: 99%