Stability of ZnO{0001} against low energy ion bombardment

Sulyok, A.; Menyhárd, M.; Malherbe, J.B.

doi:10.1016/j.susc.2007.02.011

Cited by 15 publications

(5 citation statements)

References 19 publications

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“…This difference in aging behavior suggests a more reactive ͑0001͒ surface, which is consistent with other studies. [11][12][13] CAFM current images for the as-received ͑0001͒ and ͑0001͒ surfaces show no significant correlation between topographical features and local conduction for both forward and reverse biases, which is consistent with previous studies. 6 However, local I-V spectra show an interesting dependence on the maximum applied ramp voltage.…”

supporting

confidence: 90%

Electronic behavior of the Zn- and O-polar ZnO surfaces studied using conductive atomic force microscopy

Moore

Kenny

Baird

et al. 2009

Journal of Applied Physics

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We have used conducting atomic force microscopy ͑CAFM͒ to study the morphology and electronic behavior of as-received and air-annealed ͑0001͒ Zn-and ͑0001͒ O-polar surfaces of bulk ZnO. Both polar surfaces exhibit relatively flat morphologies prior to annealing, which rearrange to form well-defined steps upon annealing in air at 1050°C for 1 h. Long-term exposure to air results in surface layer pitting and the destruction of steps for both the as-received and air-annealed ͑0001͒ surfaces, indicating its enhanced reactivity relative to the ͑0001͒ surface. CAFM I-V spectra for polar surfaces are similar and indicate Ohmic to rectifying behavior that depends on the maximum applied ramp voltage, where higher voltages result in more conducting behavior. These data and force-displacement curves suggest the presence of a physisorbed H 2 O layer, which is removed at higher voltages and results in higher conduction.

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supporting

confidence: 90%

Electronic behavior of the Zn- and O-polar ZnO surfaces studied using conductive atomic force microscopy

Moore

Kenny

Baird

et al. 2009

Journal of Applied Physics

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“…In such a case, only a very thin altered surface is created which cannot be detected by XPS. Such behaviour has recently been reported for ZnO [24] where only one monolayer thick Zn enriched layer was observed after ion bombardment. Also the influence of residual gas in the XPS chamber may be pronounced for oxides with a low sputtering rate.…”

Section: Tridyn Simulationssupporting

confidence: 76%

Modelling of low energy ion sputtering from oxide surfaces

Kubart¹,

Nyberg²,

Berg³

2010

J. Phys. D: Appl. Phys.

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The main aim with this work is to present a way to estimate values of the surface binding energy for oxides. This is done by fitting results from the binary collisions approximation code Tridyn, with data from the reactive sputtering processing curves, as well as the elemental composition obtained from X-ray photoelectron spectroscopy (XPS). Oxide targets of Al, Ti, V, Nb, and Ta are studied The obtained surface binding energies are then used to predict the partial sputtering yields.Anomalously high sputtering yield is observed for TiO 2 target. This is attributed to the high sputtering yield of Ti lower oxides. Such an effect is not observed for the other studied metals. XPS measurement of the oxide targets confirms the formation of suboxides during ion bombardment as well as an oxygen deficient surface in steady state. These effects are confirmed from the processing curves from the oxide targets showing an elevated sputtering rate in pure argon.

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“…The surface-sensitive He + LEIS, which detects only a few atomic layers of an outermost surface, confirms the decrease of the surface oxygen concentration after vacuum annealing, as shown in Figure 1d. It is known that the effect of the preferential sputtering on the elemental composition is negligibly small on the Zn-terminated ZnO(0001) surface for 2 keV Ar + ion sputtering, 48 which was used for surface cleaning in the present study. Thus, the elemental composition ratio of O/Zn is unity after the sputtering, and the decrease of the He + LEIS relative intensity ratio of O/Zn manifests the reduced oxygen concentration at the outermost surface after vacuum annealing.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Ethanol Gas Sensing by a Zn-Terminated ZnO(0001) Bulk Single-Crystalline Substrate

et al. 2020

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Metal oxide semiconductor gas sensors have been widely studied for the selective detection of various gases with trace concentrations. The identification of the reaction scheme governing the gas sensing response is crucial for further development; however, the mechanism of ethanol (EtOH) gas sensing by ZnO is still controversial despite being one of the most intensively studied target gas and sensing material combinations. In this work, for the first time, the detailed mechanism of EtOH sensing by ZnO is studied by using a bulk single-crystalline substrate, which has a well-defined stoichiometry and atomic arrangement, as the sensing material. The sensing response is substantial on the ZnO substrate even with a millimeter-size thickness, and it becomes larger with resistance of the substrate. The large sensing response is described in terms of the adsorption/desorption of the oxygen species on the substrate surface, namely, oxygen ionosorption. The valence state of the ionosorbed oxygen involved in EtOH sensing is identified to be O 2– regardless of the temperature. The increase in the sensing response with the temperature is attributed to the enhanced oxidation rate of the EtOH molecule on the surface as analyzed by pulsed-jet temperature-programmed desorption mass spectrometry, which has been newly developed for analyzing surface reactions in simulated working conditions.

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Stability of ZnO{0001} against low energy ion bombardment

Cited by 15 publications

References 19 publications

Electronic behavior of the Zn- and O-polar ZnO surfaces studied using conductive atomic force microscopy

Electronic behavior of the Zn- and O-polar ZnO surfaces studied using conductive atomic force microscopy

Modelling of low energy ion sputtering from oxide surfaces

Ethanol Gas Sensing by a Zn-Terminated ZnO(0001) Bulk Single-Crystalline Substrate

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