Stability of weakly alkaline barrier slurry with the high selectivity

Self Cite

There has been lot of work going on reducing dishing without benzotriazole (BTA) because it can lead to organic debris and other defects during the chemical mechanical planarization (CMP) although being an effective dissolution inhibitor on dishing elimination. Slurry destabilization problems also have to be closely monitored because it can cause surface defects and changes in the material removal due to particle agglomeration and the chemical degradation. In this study, FA/O chelating agent, a unique alkaline organic macromolecule, yielded a lower dishing level under the condition of no BTA compared with glycine, which allows for a substantial reduction in the use of BTA. The dissolution rate, polish rate and changes in the in-situ open circuit potential (OCP) were performed to elucidate the planarization mechanism and how the use of carcinogenic BTA can be reduced. It was also observed that the FA/O based slurry had a shelf life of no more than 7 days and the root cause was the oxidation reduction reaction between FA/O chelating agent and H 2 O 2 rather than the self-decomposition of the hydrogen peroxide.

Section: Resultsmentioning

confidence: 99%

Effect of Complexing Agent Choices on Dishing Control Level and the Shelf Life in Copper CMP Slurry

Luan¹,

Cheng²,

Liu³

et al. 2018

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“…32 In this paper, chelating agent FA/O is added to the slurry. It is a kind of organic amine alkali R(N H 2 ) 4 which can react with silicates, 33 as shown in Eqs. 5-7.…”

Section: Function Of Large Particle Count On Wiwun Of Teos-edgementioning

confidence: 99%

Effects of Large Particles on MRR, WIWNU and Surface Quality in TEOS Chemical Mechanical Polishing Based on FA/O Alkaline Slurry

Liu

Niu

et al. 2018

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Material removal rate (MRR), within-wafer non-uniformity (WIWNU), and root mean square (RMS) roughness are three of the most important factors for chemical mechanical polishing (CMP) in giant-large-scale integrated circuit(GLSI) manufacturing. The effect of large particles on edge MRR, WIWNU and RMS roughness of tetraethylorthosilicate(TEOS) via considering the chemical action was investigated and quantified in this paper. To better understand the effect of large particles on TEOS polishing, four batches of colloidal silica with different large particle count (LPC) were used to formulate slurries. The colloidal silica with higher LPC was filtered and then polishing experiments were carried out using slurry prepared with filtered colloidal silica. Compared with the polishing effect pre and post ultrafiltration, edge MRR, average MRR, WIWNU and RMS roughness were reduced by 57.14%, 34.3%, 77.6%, and 61.8% respectively. Polishing and ultrafiltration experiments demonstrated that when LPC reached 8.6 million parts./ml, edge MRR increased sharply, and WIWNU and RMS roughness were deteriorated. The deterioration mechanism based on FA/O chelating agent was also proposed and discussed in this paper. Such study has certain guiding significance for choosing the colloidal silica produced by ion exchange method to formulate slurries and for ensuring the batch stability of slurry. FA/O chelating agent.

“…pH regulator will react with Al 3+ or AlO 2 − , and generate macromolecular soluble amine salt in the convex place, while the concave area keeps higher activation energy, so the chemical reaction of the convex place is much stronger than that of the concave area. 17,18 On the other side, in concave areas, the slurry flow rate is slower than that of convex areas, which results in a thicker stagnant layer. The thickness of stagnant layer is calculated as follow: 19 δ V (x) = μx ρu 1 2 [2] δ V is the thickness of stagnant layer,μis viscosity coefficient of slurry,ρis density of slurry, x is the distance from concave center to edge and u is flow rate of the slurry.…”

Section: Cmp Mechanism Of Sapphirementioning

confidence: 99%

Effect of a pH Regulator on Sapphire Substrate CMP

Wang

Niu

Zhao

et al. 2017

Self Cite

Chemical mechanical polishing (CMP) is one of the most important methods for solid surface ultra-precision machining, and the pH value of slurry is one of the key factors influencing the material removal rate and surface roughness during CMP process. The macromolecular chelating agent and KOH were mixed as a novel pH regulator in this study. The influence of the novel pH regulator on c-plane and r-plane sapphire material removal rate and surface roughness were also investigated. As the mixed ratio of macromolecular chelating agent and KOH is 1:20 and 1:10 for c-plane and r-plane sapphire respectively with the pH value of 10, the higher removal rate and lower surface roughness were gotten. Due to anisotropic atomic structure and hydrate layer formed on c-plane surface the material removal rates were 3.23 μm/h and 0.607 μm/h for c-plane and r-plane sapphire respectively, and the surface roughness were 0.226 nm and 0.309 nm. Through observing the change of pH value, the mean particle size and zeta potential with aging time, it was found the slurry with a novel pH regulator has a better stability.