Stability of the intermediate band energy position upon temperature changes in GaNP and GaNPAs

Wełna, M.; Żelazna, K.; Létoublon, Antoine; Cornet, Charles; Kudrawiec, R.

doi:10.1016/j.solmat.2019.03.039

Cited by 7 publications

(4 citation statements)

References 40 publications

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“…Regarding this, a possible future application of our method could consist in exploring the electron conductivity in the IB that arises from the bound states within the QDs. A second feasible strategy for obtaining IB materials is based on semiconductor bulk materials containing a high density of adequate deep-level impurities and those corresponding to materials that “naturally” have an IB (theoretically predicted by ab-initio methods) [ 113 , 114 , 115 , 116 , 117 , 118 , 119 ]. Regarding the use of deep-level impurities, the proposed method could potentially be used to study when a sufficiently large density of impurities produces a transition from localized states (in the impurities) to states that are extended to the whole volume of the host semiconductor.…”

Section: Potential Applications Strengths and Weaknesses Of The mentioning

confidence: 99%

Modeling Quantum Dot Systems as Random Geometric Graphs with Probability Amplitude-Based Weighted Links

Cuadra

Borge

2021

Nanomaterials

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This paper focuses on modeling a disorder ensemble of quantum dots (QDs) as a special kind of Random Geometric Graphs (RGG) with weighted links. We compute any link weight as the overlap integral (or electron probability amplitude) between the QDs (=nodes) involved. This naturally leads to a weighted adjacency matrix, a Laplacian matrix, and a time evolution operator that have meaning in Quantum Mechanics. The model prohibits the existence of long-range links (shortcuts) between distant nodes because the electron cannot tunnel between two QDs that are too far away in the array. The spatial network generated by the proposed model captures inner properties of the QD system, which cannot be deduced from the simple interactions of their isolated components. It predicts the system quantum state, its time evolution, and the emergence of quantum transport when the network becomes connected.

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Section: Potential Applications Strengths and Weaknesses Of The mentioning

confidence: 99%

Modeling Quantum Dot Systems as Random Geometric Graphs with Probability Amplitude-Based Weighted Links

Cuadra

Borge

2021

Nanomaterials

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“…7) Among several candidate materials, dilute nitride semiconductors are an ideal IB absorber because of their unique band structure. [8][9][10][11][12] Adding a few percent of N into an III-V host semiconductor such as GaAs induces splitting of the CB into two subbands called E + and E − . [13][14][15][16][17][18] So far, prototype IBSCs based on GaAsN and GaAsPN alloys which use the energetically lower E − band as the IB while the upper E + band as the CB have been reported.…”

Section: Introductionmentioning

confidence: 99%

Effects of carrier-blocking barrier height on two-step photocurrent generation in dilute nitride intermediate band solar cells

Yagi

Numata

Yoshida

et al. 2023

Jpn. J. Appl. Phys.

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GaAs:N dilute nitride intermediate band solar cells (IBSCs) with different barrier height for blocking electron transport from the intermediate band (IB) were prepared and the role of such an electron blocking layer (EBL) was investigated. It is found that the EBL effectively confines electrons in the IB states, and two-step photocurrent generation process is strongly affected by its barrier height. A rate equation analysis well reproduced experimental observations of the applied voltage dependence of the two-step photocurrent generation process. It revealed that the electron extraction both from the conduction band and the IB through the EBL is governed by thermionic emission process. To meet the requirements of an ideal IBSC, optimized device structures including the barrier height of the EBL have to be designed properly taking into account the material parameters and carrier dynamics under the actual operating condition.

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“…For the development of GaPN alloy‐based IBSC devices, it is indispensable to understand the formation and properties of NRR centers and eliminate them during growth process. Several studies are already available on the N‐doped GaP system based on photoluminescence (PL), PL excitation (PLE) spectroscopy, [ 12 ] temperature‐dependent PL spectroscopy, [ 26–31 ] and time‐resolved PL (TRPL) studies. [ 32–35 ] On lower N concentration region, the PL spectrum of GaPN originates from discrete isoelectronic trap and NN i pairs (i.e., the average distance of N;

d_{normalN} \approx 3 nm

x = 0.028 %

).…”

Section: Introductionmentioning

confidence: 99%

Detection of Nonradiative Recombination Centers in GaPN by Combining Two‐Wavelength Excited Photoluminescence and Time‐Resolved Photoluminescence

Ferdous

Iwai

Kamata

et al. 2021

Physica Status Solidi (b)

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Presence and influence of nonradiative recombination (NRR) centers in an intermediate band (IB)‐type material, GaP1–xNx (x=0.75%), are studied by two‐wavelength excited photoluminescence (TWEPL) method and time‐resolved photoluminescence (TRPL) measurement at 77 K. With the use of below‐gap excitation (BGE) light in addition to an above‐gap excitation (AGE), the PL peak intensity is found to increase which indicates the presence of NRR centers and a secondary excitation from the IB to conduction band (CB). Depending on the effect of different BGE energies, an energy diagram on the distribution of NRR centers and NRR process is interpreted. The saturation of PL increase is attributed to the trap‐filling effect in NRR centers, which allows us to modify the rate equation. The NRR parameters are evaluated by a qualitative simulation of the modified rate equations of one‐level model together with the lifetime determined by TRPL. In continuation of evaluating NRR parameters by rate equation analysis, the addition of TRPL measurement improves accuracy and approaches the determination of NRR parameters. A successful characterization of NRR centers leads to a proper optimization of IB‐type solar cells (IBSCs).

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Stability of the intermediate band energy position upon temperature changes in GaNP and GaNPAs

Cited by 7 publications

References 40 publications

Modeling Quantum Dot Systems as Random Geometric Graphs with Probability Amplitude-Based Weighted Links

Modeling Quantum Dot Systems as Random Geometric Graphs with Probability Amplitude-Based Weighted Links

Effects of carrier-blocking barrier height on two-step photocurrent generation in dilute nitride intermediate band solar cells

Detection of Nonradiative Recombination Centers in GaPN by Combining Two‐Wavelength Excited Photoluminescence and Time‐Resolved Photoluminescence

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