Abstract:The stability of GaAs/Si superlattices grown on GaAs substrates using molecular beam epitaxy is described. Typical superlattice structures consisted of ten periods of thin (less than 6.5A thick) layers of pseudomorphic silicon alternating with thick GaAs layers. We have examined the As 2 /Ga flux conditions required for the growth of high quality superlattices and have found that the structural perfection is extremely sensitive to the V/III flux ratio. The best superlattices were grown under condition that wer… Show more
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