Stability of deuterated amorphous silicon solar cells

Munyeme, G.; Wells, J.‐P. R.; Meer, Lex F. G. van der; Dijkhuis, J. I.; Weg, W. F. van der; Schropp, R.E.I.

doi:10.1016/j.jnoncrysol.2004.02.089

Cited by 4 publications

(5 citation statements)

References 10 publications

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“…17 Studies on a-Si: D based p-i-n solar cells demonstrated superior stability against hot-electron and photoinduced degradation processes. 18,19 The authors concluded that differences in the photoinduced degradation stabilities of a-Si: H and a-Si: D were related to the differences in the Si-H and Si-D vibrational dynamics and the ability of the Si-D mode to decay directly into low frequency Si-Si lattice modes very rapidly. 18,19 It was further suggested that since the Si-H stretch does not equilibrate rapidly with the lattice, vibrational energy becomes trapped on the Si-H bond, thereby increasing the dissociation probability of the bond.…”

Section: Introductionmentioning

confidence: 99%

“…18,19 The authors concluded that differences in the photoinduced degradation stabilities of a-Si: H and a-Si: D were related to the differences in the Si-H and Si-D vibrational dynamics and the ability of the Si-D mode to decay directly into low frequency Si-Si lattice modes very rapidly. 18,19 It was further suggested that since the Si-H stretch does not equilibrate rapidly with the lattice, vibrational energy becomes trapped on the Si-H bond, thereby increasing the dissociation probability of the bond. 18,19 It is clear that direct observation of the photoexcited transient structural dynamics of the Si-H bond would prove extremely useful in understanding photodegradation in a-Si: H.…”

Section: Introductionmentioning

confidence: 99%

“…18,19 It was further suggested that since the Si-H stretch does not equilibrate rapidly with the lattice, vibrational energy becomes trapped on the Si-H bond, thereby increasing the dissociation probability of the bond. 18,19 It is clear that direct observation of the photoexcited transient structural dynamics of the Si-H bond would prove extremely useful in understanding photodegradation in a-Si: H.…”

Section: Introductionmentioning

confidence: 99%

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Si-H bond dynamics in hydrogenated amorphous silicon

Scharff

McGrane

2007

Phys. Rev. B

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The ultrafast structural dynamics of the Si-H bond in the rigid solvent environment of an amorphous silicon thin film is investigated using two-dimensional infrared four-wave mixing techniques. The two-dimensional infrared ͑2DIR͒ vibrational correlation spectrum resolves the homogeneous line shapes ͑Ͻ2.5 cm −1 linewidth͒ of the 0 → 1 and 1 → 2 vibrational transitions within the extensively inhomogeneously broadened ͑78 cm −1 linewidth͒ Si-H vibrational band. There is no spectral diffusion evident in correlation spectra obtained at 0.2, 1, and 4 ps waiting times. The Si-H stretching mode anharmonic shift is determined to be 84 cm −1 and decreases slightly with vibrational frequency. The 1 → 2 linewidth increases with vibrational frequency. Frequency dependent vibrational population times measured by transient grating spectroscopy are also reported. The narrow homogeneous line shape, large inhomogeneous broadening, and lack of spectral diffusion reported here present the ideal backdrop for using a 2DIR probe following electronic pumping to measure the transient structural dynamics implicated in the Staebler-Wronski degradation ͓Appl. Phys. Lett. 31, 292 ͑1977͔͒ in a-Si: H based solar cells.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Si-H bond dynamics in hydrogenated amorphous silicon

Scharff

McGrane

2007

Phys. Rev. B

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“…The breaking of Si-H bonds can occur either by direct electron ionization or by multiple vibrational excitation processes [6][7][8][9][10]. Foley et.…”

Section: Secondary Electron Induced Vibrational Excitation and Ionizamentioning

confidence: 99%

“…Radiation exposure can further deteriorate the performance of Si-H containing devices used in space electronics. On the other hand, non-thermal processes offer selectivity to tailor material properties at nanoscale [6][7][8][9][10]. A critical challenge is to understand the effect of energetic particles and various kinds of radiation on the stability of bonded hydrogen in semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions

et al. 2011

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We report in-situ infrared measurements of ion-induced reconfiguration and dissociation of bonded hydrogen associated with various defects in silicon at low temperatures. Defect associated Si-H complexes were prepared by low temperature proton implantation in silicon followed by room temperature annealing. As a result of subsequent low temperature 3 He ion irradiation, we observed 1) ion induced dissociation of Si-H complexes; 2) a notable difference in the dissociation rate of interstitial type and vacancy type defects; and unexpectedly, 3) the growth of bond-center hydrogen (BCH) which had previously been observed only in association with low-temperature proton implantation. These findings provide new insight into the mechanisms responsible for the dissociation of hydrogen bonds in silicon and thus have important implications for bond-selective nanoscale engineering and the long-term reliability of state-of-the-art silicon semiconductor and photovoltaic devices.

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