Stability of charge-stripe ordered La2−xSrxNiO4+δ at one third doping

Freeman, P. G.; Mole, R. A.; Christensen, Niels Bech; Stunault, A.; Prabhakaran, D.

doi:10.1016/j.physb.2017.11.009

Cited by 4 publications

(4 citation statements)

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“…Negligible DC currents are thus formed, lowering the power dissipation. This particular structure is chosen because the LSNO bulk contains abundant and stripe-ordered holes, [36][37][38][39] and a Schottky barrier can be [26,27] Therefore, the photoelectric memristors emerge as a suitable candidate for low-power, highly scalable, and highly sensitive artificial optoelectronic synapses.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…With this consideration, we design a planar Au/La 1.875 Sr 0.125 NiO 4 (LSNO)/Au MSM structure (Figure 1b) for the demonstration of photoelectric memcapacitors. This particular structure is chosen because the LSNO bulk contains abundant and stripe‐ordered holes, and a Schottky barrier can be formed at the interface between LSNO and Au . Therefore, the Au/LSNO/Au structure is expected to yield large dielectric response and significant PPC effect.…”

Section: Comparison Of Device Structure and Performance Between The Pmentioning

confidence: 99%

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An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

Zhao

Fan

Cheng

et al. 2019

Adv Elect Materials

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away quickly when the light stimuli are removed. [3][4][5] In other words, traditional photodetectors can detect the images like a retina, but they lack the memory function owned by the visual cortex (see schematic illustration of human visual system in Figure 1a). To realize both detection and memory functions so as to better imitate the human visual system, researchers have attempted to integrate the photodetectors with the nonvolatile memory devices. [6][7][8][9] For example, a bioinspired visual system comprising an In 2 O 3 nanowire photodetector connected in series with an Al 2 O 3 memristor was fabricated recently, which could capture a butterflyshaped image and store it for more than 1 week. [9] In such integrated devices, however, the units responsible for detection, processing, and storage of optical information are physically separated, resulting in high power consumption for data transfer between different units (just as the Von Neumann bottleneck [10,11] ).A simple yet effective humanoid optoelectronic device emerging recently is the artificial optoelectronic synapse based on the photoelectric memristor, which can co-locate the detection and memory functions in a single unit. As the name suggests, a photoelectric memristor can continuously change its resistance upon light stimuli, resembling the physiological The rapid development of artificial intelligence technology has led to the urge for artificial optoelectronic synapses with visual perception and memory capabilities. A new type of artificial optoelectronic synapse, namely a photo electric memcapacitor, is proposed and demonstrated. This photoelectric memcapacitor, with a planar Au/La 1.875 Sr 0.125 NiO 4 /Au metal-semiconductormetal structure, displays a complementary optical and electrical modulation of capacitance, which can be attributed to the charge trapping/detrapping induced Schottky barrier variation. It further exhibits versatile synaptic functions, such as photonic potentiation/electric depression, pairedpulse facilitation, short/longterm memory, and "learningexperience" behavior. Moreover, the photoplasticity of the memcapacitor can be modulated by varying the frequency of applied AC voltage, thus enabling selfadaptive optical signal detection and mimicry of interestmodulated human visual memory. Therefore, it represents a new paradigm for artificial optoelectronic synapses and opens up opportunities for developing lowpower humanoid optoelectronic devices.

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Section: Wwwadvelectronicmatdementioning

confidence: 99%

Section: Comparison Of Device Structure and Performance Between The Pmentioning

confidence: 99%

An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

Zhao

Fan

Cheng

et al. 2019

Adv Elect Materials

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“…1) Extensive research has been undertaken to understand insulating charge ordered materials to aid this research. 2,3) With the vast amount of research conducted into both charge ordered materials and cuprates it is important to keep a clear understanding of what points have been proven, and what are reasonable assumptions that are made about these materials.…”

mentioning

confidence: 99%

“…We chose to study an oxygen doped, and a Sr doped sample due small differences in their ordered structure. 2,8) Large single crystals of La 2 NiO 4.11±0.01 (δ = 0.11) and La 1.7 Sr 0.3 NiO 4 (x = 0.3) were grown using the floating-zone technique, 9) with oxygen content of as grown crystals determined by thermogravimetric analysis. 10) Both crystals were approximately 15 g rods of 45 mm length and 8 mm diameter, with the δ = 0.11 crystal having been previously studied.…”

mentioning

confidence: 99%

Lack of Out-of-Plane Dispersion of the Magnetic Excitations of Charge-Stripe Ordered La₂₋_xSr_xNiO₄₊_δ

2022

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Wave Vector Difference of Magnetic Bragg Reflections and Low Energy Magnetic Excitations in Charge-stripe Ordered La2NiO4.11

Freeman

Giblin

Skoulatos

et al. 2019

Sci Rep

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We report on the magnetism of charge-stripe ordered La2NiO4.11±0.01 by neutron scattering and μSR. On going towards zero energy transfer there is an observed wave vector offset in the centring of the magnetic excitations and magnetic Bragg reflections, meaning the excitations cannot be described as Goldstone modes of the magnetic order. Weak transverse field μSR measurements determine the magnetically order volume fraction is 87% from the two stripe twins, and the temperature evolution of the magnetic excitations is consistent with the low energy excitations coming from the magnetically ordered volume of the material. We will discuss how these results contrast with the proposed origin of a similar wave vector offset recently observed in a La-based cuprate, and possible origins of this effect in La2NiO4.11.

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Stability of charge-stripe ordered La2−xSrxNiO4+δ at one third doping

Cited by 4 publications

References 69 publications

An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

Lack of Out-of-Plane Dispersion of the Magnetic Excitations of Charge-Stripe Ordered La₂₋_xSr_xNiO₄₊_δ

Wave Vector Difference of Magnetic Bragg Reflections and Low Energy Magnetic Excitations in Charge-stripe Ordered La2NiO4.11

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Stability of charge-stripe ordered La2−xSrxNiO4+δ at one third doping

Cited by 4 publications

References 69 publications

An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

Lack of Out-of-Plane Dispersion of the Magnetic Excitations of Charge-Stripe Ordered La2−xSrxNiO4+δ

Wave Vector Difference of Magnetic Bragg Reflections and Low Energy Magnetic Excitations in Charge-stripe Ordered La2NiO4.11

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Lack of Out-of-Plane Dispersion of the Magnetic Excitations of Charge-Stripe Ordered La₂₋_xSr_xNiO₄₊_δ