Stability and Application to Multilevel Metallization of Fluorine-Doped Silicon Oxide by High-Density Plasma Chemical Vapor Deposition

Abstract

We measured the spectrum of cesium emitted by a pulsed radio-frequency discharge in the region 1550 Å to 40 000 Å using concave grating spectrographs, Fabry-Perot interferometry, and Fourier transform spectroscopy. By varying the operating parameters of the discharge, we identified approximately 1700 of the more than 3000 spectral lines observed in this region as belonging to the spectrum of singly-ionized cesium (Cs II). Of these, 1683 were classified as transitions among 118 even and 165 odd energy levels. Partially or fully resolved hyperfine structure was analyzed for 579 lines.

Chronic Stability of Local Field Potentials Using Amorphous Silicon Carbide Microelectrode Arrays Implanted in the Rat Motor Cortex

“…The relatively low channel count (16 electrode sites) of the devices used in this study is a limitation for their use in brain-machine interfaces, which benefit from high-channel counts for neuronal decoding [ 25 ]. Our group is currently investigating strategies to increase channel density, while maintaining a small cross-sectional dimension, which may include electron beam lithography [ 61 , 62 ] and multilayer metallization [ 63 , 64 ].…”

Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects

“…Yun et al deposited SiOF film using helicon plasma with a FTES, O 2 , and Ar mixture, a SiF 4 , O 2 , and Ar mixture at a pressure of below 10 mTorr, and SiF 4 /O 2 and FTES/O 2 . Structural information on the water absorption of SiOF deposited using inductively coupled plasma (ICP) from a SiH 4 , O 2 , and SiF 4 mixture was reported Tamura et al and Koyanagi et al High‐purity CVD SiOF was obtained; H and C impurities, which affect film density and chemical bond structure, were removed using high‐density plasma.…”