Stability Analysis in CNTFETs

A seamless-pitched graphene nanoribbon field effect transistor

“…This would eliminate any Schottky barrier between the pitched channels and S/D contacts in the GNRFET [20][21][22]. This, in turn, reduces the resistance of the S/D series and hence the overall system resistance.…”

“…The step time responses of SP-GNRFETs, like those of pitched CNTFETs [21] and unlike those of GNR/CNT-based local interconnects [22,27], exhibit multi-harmonic oscillations. This different behavior can be explainedby a comparison of the corresponding circuit models and transfer functions.…”

“…(2)). On the other hand, for interconnects made of either MLGNR [21] or the multiwall CNT (MWCNT) bundle [27], the signal passes through a single path, and hence the numerator of the corresponding transfer function is unity. Amplification of each harmonic in the output of SP-GNRFETs and pitched CNTFETs can damagethe input to the next stage on the chip in RFICs.…”

“…In most of these studies, there is a Schottky barrier between the semiconducting GNR channel and the metallic S/D contacts, and this barrierlimits the frequency bandwidth of GNRFETs. high-frequency small-signal circuit model of FET [21] In this paper, we propose a new GNRFET structure in which the semiconducting array of GNRs is connected to the metallic S/D contacts in a seamless fashion.With the new stitching and patterning technologies, the proposed structure is potentially applicable in the very near future. In [14], Luan et al proposed a seamless stitching of graphene domains on the polished copper foil in sub-10 nm scales.…”

“…This made us analyze time domain step responses and the relative stability of CS SP-GNRFETs. Moreover, we drew a comparison between SP-GNRFETs and pitched carbon nanotube FETs(CNTFETs) in terms of frequency, time domain, and stability [21]. Fig.…”