2016 11th European Microwave Integrated Circuits Conference (EuMIC) 2016
DOI: 10.1109/eumic.2016.7777530
|View full text |Cite
|
Sign up to set email alerts
|

Stability analysis and demonstration of an X-band GaN power amplifier MMIC

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
5
0

Year Published

2018
2018
2022
2022

Publication Types

Select...
4
3

Relationship

0
7

Authors

Journals

citations
Cited by 7 publications
(5 citation statements)
references
References 7 publications
0
5
0
Order By: Relevance
“…where P and R are the factors jointly determined by the internal and external elements of the model [26]. Since the noise current source is not independent, C is the noise correlation coefficient of Ig and Id.…”
Section: Stability Handlementioning
confidence: 99%
“…where P and R are the factors jointly determined by the internal and external elements of the model [26]. Since the noise current source is not independent, C is the noise correlation coefficient of Ig and Id.…”
Section: Stability Handlementioning
confidence: 99%
“…As a third example, we consider the small-signal stability analysis of an X-band PA designed in the 0.25µm GaN HEMT technology GH25-10 of UMS [27]. The circuit and its design are described in great detail in [18]. The resulting MMIC is shown in Fig.…”
Section: Example 3: Two-stage Power Amplifiermentioning
confidence: 99%
“…The PA is a two-stage design where the second stage consists of two branches with each two transistors in parallel. In simulation, the second stage of the PA demonstrated an odd-mode instability [18], so a stabilisation resistor was added between the drains of the top and bottom halves of the second stage of the PA (as indicated in the Fig. ).…”
Section: Example 3: Two-stage Power Amplifiermentioning
confidence: 99%
See 2 more Smart Citations