2023
DOI: 10.1007/s10562-023-04543-4
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SrTiO3–TiO2 Litchi-Like Hollow Nanospheres for Superior Photocatalytic Hydrogen Production

Yuhao Yang,
Yixia Zhang,
Tingting Wang
et al.
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Cited by 2 publications
(1 citation statement)
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“…Specifically, the flat-band potential for g-C 3 N 4 was approximately −1.6 eV, while for MoS 2 NTs, it was around −0.13 eV. Given that the conduction band potential of n-type semiconductors closely aligns with the flat-band potential, we approximated the flat-band potential as the conduction band potential for subsequent calculations . To approximate the band structure based on the bandgap diagrams and Mott–Schottky curves of MoS 2 NTs and g-C 3 N 4 , it can be calculated using the following formula: E CB = E VB - E g , where E CB is the valence band potential (eV); E VB is the conduction potential (eV); E g is the Band gap (eV).…”
Section: Resultsmentioning
confidence: 99%
“…Specifically, the flat-band potential for g-C 3 N 4 was approximately −1.6 eV, while for MoS 2 NTs, it was around −0.13 eV. Given that the conduction band potential of n-type semiconductors closely aligns with the flat-band potential, we approximated the flat-band potential as the conduction band potential for subsequent calculations . To approximate the band structure based on the bandgap diagrams and Mott–Schottky curves of MoS 2 NTs and g-C 3 N 4 , it can be calculated using the following formula: E CB = E VB - E g , where E CB is the valence band potential (eV); E VB is the conduction potential (eV); E g is the Band gap (eV).…”
Section: Resultsmentioning
confidence: 99%